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1. CA2203904 - IN SITU GETTER PUMP SYSTEM AND METHOD

专利局 加拿大
申请号 2203904
申请日 30.10.1995
公布号 2203904
公布日 09.05.1996
授权号
授权日 12.02.2002
公布类型 C
国际专利分类
H 电学
01
基本电气元件
L
半导体器件;其他类目中不包括的电固体器件
21
专门适用于制造或处理半导体或固体器件或其部件的方法或设备
C 化学;冶金
23
对金属材料的镀覆;用金属材料对材料的镀覆;表面化学处理;金属材料的扩散处理;真空蒸发法、溅射法、离子注入法或化学气相沉积法的一般镀覆;金属材料腐蚀或积垢的一般抑制
C
金属材料的表面处理
14
通过覆层形成材料的真空蒸发、溅射或离子注入进行镀覆
22
以镀覆工艺为特征的
54
镀覆工艺的控制或调节(一般控制或调节入G05)
C 化学;冶金
23
对金属材料的镀覆;用金属材料对材料的镀覆;表面化学处理;金属材料的扩散处理;真空蒸发法、溅射法、离子注入法或化学气相沉积法的一般镀覆;金属材料腐蚀或积垢的一般抑制
C
金属材料的表面处理
14
通过覆层形成材料的真空蒸发、溅射或离子注入进行镀覆
22
以镀覆工艺为特征的
56
连续镀覆的专用设备;维持真空的装置,例如真空锁定器
F 机械工程;照明;加热;武器;爆破
04
B
液体变容式机械;泵
37
专门适用于弹性流体的并且其相关特征不包含在F04B 25/00至F04B 35/00组中或与上述各组无关的泵
02
通过吸收或吸附而抽出
F 机械工程;照明;加热;武器;爆破
04
B
液体变容式机械;泵
37
专门适用于弹性流体的并且其相关特征不包含在F04B 25/00至F04B 35/00组中或与上述各组无关的泵
06
用热力法抽出
08
用冷凝或冷冻,如低温泵
H01L 21/00
C23C 14/54
C23C 14/56
F04B 37/02
F04B 37/08
CPC
C23C 14/564
C23C 14/54
C23C 14/56
F04B 37/02
F04B 37/08
申请人 SAES PURE GAS, INC.
发明人 LORIMER, D'ARCY H.
KRUEGER, GORDON P.
优先权数据 08332564 31.10.1994 US
标题
(EN) IN SITU GETTER PUMP SYSTEM AND METHOD
(FR) PROCEDE ET SYSTEME DE POMPE GETTER IN SITU
摘要
(EN)
A wafer processing system including a processing chamber, a low pressure pump coupled to the processing chamber for pumping noble and non-noble gases, a valve mechanism coupling a source of noble gas to the processing chamber, an in situ getter pump disposed within the processing chamber which pumps certain non-noble gases during the flow of the noble gas into the chamber, and a processing mechanism for processing a wafer disposed within the processing chamber. Preferably, the in situ getter pump can be operated at a number of different temperatures to preferentially pump different species of gas at those temperatures. A gas analyzer is used to automatically control the temperature of the getter pump to control the species of gases that are pumped from the chamber. A method for processing a wafer of the present invention includes the steps of placing a wafer within a processing chamber and sealing the chamber, flowing a noble gas into the chamber while simultaneously pumping the chamber with an external low pressure pump and with an in situ getter pump disposed within the chamber which pumps non-noble gases, and processing the wafer within the chamber while the noble gas continues to flow. The method also preferably includes the steps of monitoring the composition of the gas within the chamber and controlling the temperature of the getter material based upon the analysis of the composition.

其他公布号
MXPA/a/2000/010004
MXPA/a/2000/010005
MXPA/a/2000/010006