Поиск по международным и национальным патентным фондам
Поиск по международным и национальным патентным фондам |
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| 1. (WO2018055704) SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME |
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| IPC: | H01L 21/336 H01L 29/788 H01L 29/792 |
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| Applicants: | TOSHIBA MEMORY CORPORATION 東芝メモリ株式会社 |
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| Inventors: | SAKAMOTO, Wataru 坂本 渉 NAKAKI, Hiroshi 中木 寛 ISHIHARA, Hanae 石原 英恵 |
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| Title: | SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME |
| Abstract: |
The semiconductor device according to an embodiment includes a laminate, a first insulating layer, first and second step parts 2, and a second insulating layer 46. The laminate includes a first electrode layer 41 (WLDD) and a second electrode layer 41 (SGD). The first and second step parts 2 are provided to a first end-section region 101 and a second end-section region 102. The second insulating layer 46 extends in the X-direction. The second insulating layer divides the second electrode layer 41 (SGD) along the X-direction. The length L1 of the second insulating layer 46 along the X-direction is greater than the length L2 of the second electrode layer 41 (SGD) along the X-direction and less than the length L3 of the first electrode layer 41 (WLDD) along the X-direction.
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