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1. US20120275568 - Combining X-ray and VUV analysis of thin film layers

Office États-Unis d'Amérique
Numéro de la demande 13419497
Date de la demande 14.03.2012
Numéro de publication 20120275568
Date de publication 01.11.2012
Numéro de délivrance 08565379
Date de délivrance 22.10.2013
Type de publication B2
CIB
G01N 23/201
GPHYSIQUE
01MÉTROLOGIE; TESTS
NRECHERCHE OU ANALYSE DES MATÉRIAUX PAR DÉTERMINATION DE LEURS PROPRIÉTÉS CHIMIQUES OU PHYSIQUES
23Recherche ou analyse des matériaux par l'utilisation de rayonnement (ondes ou particules), p.ex. rayons X ou neutrons, non couvertes par les groupes G01N3/-G01N17/201
20en utilisant la diffraction de la radiation par les matériaux, p.ex. pour rechercher la structure cristalline; en utilisant la diffusion de la radiation par les matériaux, p.ex. pour rechercher les matériaux non cristallins; en utilisant la réflexion de la radiation par les matériaux
201en mesurant la diffusion sous un petit angle, p.ex. la diffusion des rayons X sous un petit angle
CPC
G01N 23/201
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
23Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00G01N17/00, G01N21/00 or G01N22/00
20by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
201by measuring small-angle scattering
G01N 21/211
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
21Polarisation-affecting properties
211Ellipsometry
G01N 21/274
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
27using photo-electric detection
274Calibration, base line adjustment, drift correction
G01N 21/33
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
33using ultra-violet light
G01N 21/8422
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
8422Investigating thin films, e.g. matrix isolation method
G01N 21/94
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
94Investigating contamination, e.g. dust
Déposants Mazor Isaac
Jordan Valley Semiconductors Ltd.
Wormington Matthew
Dag Ayelet
Khachatryan Bagrat
Inventeurs Mazor Isaac
Wormington Matthew
Dag Ayelet
Khachatryan Bagrat
Mandataires D. Kligler I.P. Services Ltd.
Titre
(EN) Combining X-ray and VUV analysis of thin film layers
Abrégé
(EN)

Apparatus for inspection of a sample includes an X-ray source, which is configured to irradiate a location on the sample with a beam of X-rays. An X-ray detector is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays. A VUV source is configured to irradiate the location on the sample with a beam of VUV radiation. A VUV detector is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation. A processor is configured to process the first and second signals in order to measure a property of the sample.