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1. JP2017527222 - 光センサ及びカメラ

Office Japon
Numéro de la demande 2017513116
Date de la demande 08.09.2015
Numéro de publication 2017527222
Date de publication 14.09.2017
Numéro de délivrance 6661617
Date de délivrance 14.02.2020
Type de publication B2
CIB
H04N 5/3745
HÉLECTRICITÉ
04TECHNIQUE DE LA COMMUNICATION ÉLECTRIQUE
NTRANSMISSION D'IMAGES, p.ex. TÉLÉVISION
5Détails des systèmes de télévision
30Transformation d'informations lumineuses ou analogues en informations électriques
335utilisant des capteurs d'images à l'état solide  
369architecture du capteur SSIS; circuits associés à cette dernière
374Capteurs adressés, p.ex. capteurs MOS ou CMOS
3745ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
CPC
H01L 27/14607
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
14607Geometry of the photosensitive area
H01L 27/14609
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14609Pixel-elements with integrated switching, control, storage or amplification elements
H01L 27/14627
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
14627Microlenses
H01L 27/14812
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
148Charge coupled imagers
14806Structural or functional details thereof
14812Special geometry or disposition of pixel-elements, address lines or gate-electrodes
H04N 5/369
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
G01S 3/781
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
3Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received
78using electromagnetic waves other than radio waves
781Details
Déposants マイクロソフト テクノロジー ライセンシング,エルエルシー
Inventeurs コーエン,デイヴィッド
タドモル,エレズ
ヤハヴ,ジオラ
Mandataires 伊東 忠重
伊東 忠彦
大貫 進介
Données relatives à la priorité 14479381 08.09.2014 US
Titre
(JA) 光センサ及びカメラ
Abrégé
(JA)

複数の感光ピクセルを持つ光センサが開示される。複数の感光ピクセルの各々が、感光領域と、感光領域内で生成された光電荷を蓄積する複数の蓄積領域と、各蓄積領域に対する転送ゲートであり、感光領域から該蓄積領域に光電荷を転送するように選択的に帯電可能な転送ゲートと、各蓄積領域に関して、ピクセルに入射する光の異なる部分を、他の蓄積領域に対してよりも該蓄積領域に対して近い感光領域の領域に導くマイクロレンズのアレイとを有する。