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1. WO2021057415 - DISPOSITIF SEMI-CONDUCTEUR D’ÉNERGIE DU TYPE À TRANCHÉE D'ISOLATION DE TRANCHÉE PROFONDE À FAIBLE EMI ET SON PROCÉDÉ DE PRÉPARATION

Numéro de publication WO/2021/057415
Date de publication 01.04.2021
N° de la demande internationale PCT/CN2020/112957
Date du dépôt international 02.09.2020
CIB
H01L 23/552 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
23Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
552Protection contre les radiations, p.ex. la lumière
CPC
H01L 23/552
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
552Protection against radiation, e.g. light ; or electromagnetic waves
H01L 29/0696
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0684characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
0692Surface layout
0696of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
H01L 29/66333
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66234Bipolar junction transistors [BJT]
66325controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
66333Vertical insulated gate bipolar transistors
H01L 29/66712
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66674DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
66712Vertical DMOS transistors, i.e. VDMOS transistors
H01L 29/7398
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field-effect, ; e.g. bipolar static induction transistors [BSIT]
7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
7395Vertical transistors, e.g. vertical IGBT
7398with both emitter and collector contacts in the same substrate side
H01L 29/7802
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
Déposants
  • 南京芯长征科技有限公司 NANJING MARCHING POWER TECHNOLOGY CO., LTD [CN]/[CN]
Inventeurs
  • 白玉明 BAI, Yuming
  • 杨飞 YANG, Fei
  • 吴凯 WU, Kai
  • 张广银 ZHANG, Guangyin
  • 朱阳军 ZHU, Yangjun
Mandataires
  • 苏州国诚专利代理有限公司 SUZHOU GUOCHENG PATENT AGENCY CO., LTD
Données relatives à la priorité
201910932285.529.09.2019CN
Langue de publication chinois (ZH)
Langue de dépôt chinois (ZH)
États désignés
Titre
(EN) LOW-EMI DEEP TRENCH ISOLATION TRENCH TYPE POWER SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR
(FR) DISPOSITIF SEMI-CONDUCTEUR D’ÉNERGIE DU TYPE À TRANCHÉE D'ISOLATION DE TRANCHÉE PROFONDE À FAIBLE EMI ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 低EMI深沟槽隔离沟槽型功率半导体器件及其制备方法
Abrégé
(EN)
The present invention relates to the technical field of power semiconductor devices, and relates to a power semiconductor device and a preparation method therefor, and particularly, a low-EMI deep trench isolation trench type power semiconductor device and a preparation method therefor. In the present invention, terminal through hole isolation is used for replacing an existing field limiting ring terminal structure, so that the terminal area is remarkably reduced, the chip costs are reduced, and the chip current density is improved. A gate metal and a back electrode structure are placed on the back surface of a semiconductor substrate, and a source metal is located on the front surface of the semiconductor substrate; during package, the source metal is welded on the package substrate, and the gate metal and the drain metal are led out by means of routing. Because the source metal is at a low potential, a point location of the package substrate is kept at a low potential, the effect of the package substrate emitting an electromagnetic field outwards is basically eliminated, and the EMI interference is reduced.
(FR)
La présente invention concerne le domaine technique des dispositifs semi-conducteurs d'énergie, et concerne un dispositif semi-conducteur d'énergie et son procédé de préparation, et en particulier, un dispositif semi-conducteur d'énergie du type à tranchée d'isolation de tranchée profonde à faible EMI et son procédé de préparation. Dans la présente invention, une isolation de trou traversant de borne est utilisée pour remplacer une structure de borne à anneau de limitation de champ existante, de telle sorte que la zone de borne est remarquablement réduite, que les coûts de puce sont réduits, et que la densité de courant de puce est améliorée. Un métal de grille et une structure d'électrode arrière sont placés sur la surface arrière d'un substrat semi-conducteur, et un métal de source est situé sur la surface avant du substrat semi-conducteur ; pendant l'emballage, le métal de source est soudé sur le substrat de boîtier, et le métal de grille et le métal de drain sont retirés au moyen d'un routage. Du fait que le métal de source est à un potentiel bas, un emplacement ponctuel du substrat de boîtier est maintenu à un faible potentiel, l'effet du substrat de boîtier émettant un champ électromagnétique vers l'extérieur est fondamentalement éliminé, et l'interférence EMI est réduite.
(ZH)
本发明涉及一种功率半导体器件及其制备方法,尤其是一种低EMI深沟槽隔离沟槽型功率半导体器件及其制备方法,属于功率半导体器件的技术领域。本发明用终端通孔隔离取代现有场限环终端结构,终端面积显著降低,降低芯片成本,提高芯片电流密度。将栅极金属和背面电极结构放置在半导体衬底的背面,源极金属位于半导体衬底的正面,封装时,将源极金属焊接在封装基板上,栅极金属和漏极金属通过打线引出。由于源极金属是处于低电位,因此,封装基板点位保持为低电位,封装基板向外发射电磁场的效应基本被消除,EMI干扰降低。
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