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1. WO2021043596 - PROCÉDÉ DE DÉTERMINATION DE SENSIBILITÉ D'ABERRATION DE MOTIFS

Numéro de publication WO/2021/043596
Date de publication 11.03.2021
N° de la demande internationale PCT/EP2020/073448
Date du dépôt international 21.08.2020
CIB
G03F 7/20 2006.01
GPHYSIQUE
03PHOTOGRAPHIE; CINÉMATOGRAPHIE; TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; ÉLECTROGRAPHIE; HOLOGRAPHIE
FPRODUCTION PAR VOIE PHOTOMÉCANIQUE DE SURFACES TEXTURÉES, p.ex. POUR L'IMPRESSION, POUR LE TRAITEMENT DE DISPOSITIFS SEMI-CONDUCTEURS; MATÉRIAUX À CET EFFET; ORIGINAUX À CET EFFET; APPAREILLAGES SPÉCIALEMENT ADAPTÉS À CET EFFET
7Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
20Exposition; Appareillages à cet effet
CPC
G03F 7/70433
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
70433Layout for increasing efficiency, for compensating imaging errors, e.g. layout of exposure fields,; Use of mask features for increasing efficiency, for compensating imaging errors
G03F 7/70441
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
70433Layout for increasing efficiency, for compensating imaging errors, e.g. layout of exposure fields,; Use of mask features for increasing efficiency, for compensating imaging errors
70441Optical proximity correction
G03F 7/705
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70491Information management and control, including software
705Modelling and simulation from physical phenomena up to complete wafer process or whole workflow in wafer fabrication
G03F 7/706
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70591Testing optical components
706Aberration measurement
G03F 7/70616
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
G03F 7/70666
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70666using aerial image
Déposants
  • ASML NETHERLANDS B.V. [NL]/[NL]
Inventeurs
  • LIU, Jingjing
  • HSU, Duan-Fu, Stephen
  • PENG, Xingyue
Mandataires
  • ASML NETHERLANDS B.V.
Données relatives à la priorité
62/895,37203.09.2019US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) METHOD FOR DETERMINING ABERRATION SENSITIVITY OF PATTERNS
(FR) PROCÉDÉ DE DÉTERMINATION DE SENSIBILITÉ D'ABERRATION DE MOTIFS
Abrégé
(EN)
Described herein is a method (300) for determining process window limiting patterns (PWLP) based on aberration sensitivity associated with a patterning apparatus. The method includes (P301) obtaining (i) a first set of kernels (301) and a second set of kernels (302) associated with an aberration wavefront of the patterning apparatus and (ii) a design layout (303) to be printed on a substrate via the patterning apparatus; and determining (P303), via a process simulation using the design layout, the first set of kernels, and the second set of kernels, an aberration sensitivity map (310) associated with the aberration wavefront, the aberration sensitivity map indicating how sensitive one or more portions of the design layout are to an individual aberrations and an interaction between different aberrations; determining (P305), based on the aberration sensitivity map, the PWLP (315) associated with the design layout having relatively high sensitivity compared to other portions of the design layout.
(FR)
Procédé (300) pour déterminer des motifs de limitation de fenêtre de traitement (PWLP) sur la base d'une sensibilité d'aberration associée à un appareil de formation de motifs. Le procédé consiste à (P301)) obtenir (i) un premier ensemble de noyaux (301) et un second ensemble de noyaux (302) associés à un front d'onde d'aberration de l'appareil de formation de motifs et (ii) un agencement de dessins (303) à imprimer sur un substrat par l'intermédiaire de l'appareil de formation de motifs ; et déterminer (P303), par l'intermédiaire d'une simulation de processus utilisant l'agencement de dessins, le premier ensemble de noyaux et le second ensemble de noyaux, une carte de sensibilité d'aberration (310) associée au front d'onde d'aberration, la carte de sensibilité d'aberration indiquant la manière dont une ou plusieurs parties de la disposition de dessins sont sensibles à des aberrations individuelles et une interaction entre différentes aberrations ; déterminer (P305), sur la base de la carte de sensibilité d'aberration, les PWLP (315) associé sà l'agencement de dessins ayant une sensibilité relativement élevée par comparaison avec d'autres parties de l'agencement de dessins.
Dernières données bibliographiques dont dispose le Bureau international