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1. WO2020197685 - BARRIÈRE DE DIFFUSION DE SOUDURE DE TRANCHE À MOTIFS

Numéro de publication WO/2020/197685
Date de publication 01.10.2020
N° de la demande internationale PCT/US2020/020074
Date du dépôt international 27.02.2020
CIB
H01L 21/768 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
70Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun, ou de parties constitutives spécifiques de ceux-ci; Fabrication de dispositifs à circuit intégré ou de parties constitutives spécifiques de ceux-ci
71Fabrication de parties spécifiques de dispositifs définis en H01L21/7089
768Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/48 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
23Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
48Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
CPC
H01L 21/76847
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76841Barrier, adhesion or liner layers
76843formed in openings in a dielectric
76847the layer being positioned within the main fill metal
H01L 21/76898
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76898formed through a semiconductor substrate
H01L 2224/04026
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
04026Bonding areas specifically adapted for layer connectors
H01L 2224/05009
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
05001Internal layers
05005Structure
05009Bonding area integrally formed with a via connection of the semiconductor or solid-state body
H01L 2224/05011
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
05001Internal layers
0501Shape
05011comprising apertures or cavities
H01L 2224/05144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
05001Internal layers
05099Material
051with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
05138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
05144Gold [Au] as principal constituent
Déposants
  • RAYTHEON COMPANY [US]/[US]
Inventeurs
  • DUVAL, Paul J.
Mandataires
  • DURKEE, Paul, D.
  • DIMOV, Kiril, O.
  • DALY, Christopher, S.
  • MOFFORD, Donald, F.
  • ROBINSON, Kermit
  • MOOSEY, Anthony, T.
  • CROWLEY, Judith, C.
  • DOWNING, Marianne, M.
  • BLAU, David, E.
  • DUBUC, Marisa, J.
  • LANGE, Kristoffer, W.
Données relatives à la priorité
16/363,07225.03.2019US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) PATTERNED WAFER SOLDER DIFFUSION BARRIER
(FR) BARRIÈRE DE DIFFUSION DE SOUDURE DE TRANCHE À MOTIFS
Abrégé
(EN)
Methods and apparatus for an integrated circuit having with a frontside metal layer on the frontside of the substrate and a backside metal layer on the backside of the substrate. The backside metal layer is deposited onto the backside of the substrate and into the via such that a portion of the backside metal layer is connected to a portion of the frontside metal layer. A diffusion barrier layer is deposited on the backside metal layer located in the via.
(FR)
L'invention concerne des procédés et un appareil pour un circuit intégré ayant une couche métallique avant sur la face avant du substrat et une couche métallique arrière sur la face arrière du substrat. La couche métallique arrière est déposée sur la face arrière du substrat et dans le trou d'interconnexion de telle sorte qu'une partie de la couche métallique arrière est reliée à une partie de la couche métallique avant. Une couche barrière de diffusion est déposée sur la couche métallique arrière située dans le trou d'interconnexion.
Également publié en tant que
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