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1. WO2020113170 - INTERCONNEXION À MICROCANAUX ET PROCÉDÉ DE FABRICATION ASSOCIÉ

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

[ EN ]

WHAT IS CLAIMED IS:

1. An interconnect for an electrochemical reactor comprising at least one microchannel, wherein the at least one microchannel has a cross-sectional area orthogonal to a flow path no greater than 1 mm2.

2. The interconnect of claim 1, wherein the cross-sectional area is no greater than 0.5 mm2, or no greater than 10,000 pm2, or no greater than 2,500 pm2.

3. The interconnect of claim 1, wherein the at least one microchannel has a planar projection area PPAc and the interconnect has a planar projection area PPAi, wherein the ratio of PPAc/PPAi is in the range of 0.2 - 0.8, or 0.3 - 0.7, or 0.4 - 0.6, or 0.45 - 0.55.

4. The interconnect of claim 1 having a thickness of no greater than 1 mm, or no greater than 100 pm, or no greater than 50 pm.

5. The interconnect of claim 1, wherein the interconnect has one or more openings in fluid communication with the at least one microchannel, through which fluids can enter or exit the at least one microchannel.

6. The interconnect of claim 1, wherein the interconnect is generally planar.

7. The interconnect of claim 1, wherein the interconnect comprises one or more of metal, stainless steel, ferritic steel, crofer, lanthanum chromite, doped lanthanum chromite, copper, silver, metal alloys, nickel, nickel oxide, ceramics, lanthanum calcium chromite or YSZ.

8. An interconnect for an electrochemical reactor comprising interconnect material and a template, wherein the template occupies at least one microchannel in the interconnect material.

9. The interconnect of claim 8, wherein the at least one microchannel has a cross-sectional area orthogonal to a flow path no greater than 1 mm2.

10. The interconnect of claim 9, wherein said cross-sectional area is no greater than 0.5 mm2, or no greater than 10,000 pm2, or no greater than 2,500 pm2.

11. The interconnect of claim 10, wherein the at least one microchannel has a planar projection area PPAc and the interconnect has a planar projection area PPAi, wherein the ratio of PPAc/PPAi is in the range of 0.2 - 0.8 or 0.3 - 0.7 or 0.4 - 0.6 or 0.45 - 0.55.

12. The interconnect of claim 8, wherein the interconnect material comprises one or more of metal, stainless steel, ferritic steel, crofer, lanthanum chromite, doped lanthanum chromite, copper, silver, metal alloys, nickel, nickel oxide, ceramics, lanthanum calcium chromite or YSZ.

13. The interconnect of claim 8, wherein the template comprises one or more of carbon, graphite, graphene, cellulose, metal oxides, polymethyl methacrylate or nano diamonds.

14. The interconnect of claim 8 having a thickness of no greater than 1 mm, or no greater than 100 pm, or no greater than 50 pm.

15. The interconnect of claim 8, wherein the template also occupies space in the

interconnect material such that when at least a portion of the template is removed, the space produces one or more openings for fluid passage, wherein the one or more openings are in fluid communication with the at least one microchannel.

16. The interconnect of claim 8, wherein the interconnect is generally planar.

17. An electrochemical reactor comprising:

at least two repeat units, each repeat unit comprising a first electrode, a second electrode and an electrolyte between the first and second electrode;

an interconnect with one major face adjacent the second electrode of one repeat unit and another major face adjacent the first electrode of another repeat unit, wherein the interconnect comprises a microchannel on the one major face and a microchannel on the other major face, and wherein each of the microchannels has a cross-sectional area orthogonal to a flow path no greater than 1 mm2.

18. A method of making an interconnect comprising forming an interconnect and forming at least one microchannel in the interconnect, wherein the at least one microchannel has a cross-sectional area orthogonal to a flow path no greater than 1 mm2.

19. The method of claim 18, wherein the interconnect with the at least one microchannel is formed via additive manufacturing.

20. The method of claim 18, wherein forming the interconnect with the at least one microchannel in the interconnect comprises sintering using electromagnetic radiation.