Traitement en cours

Veuillez attendre...

Paramétrages

Paramétrages

Aller à Demande

1. WO2020112372 - COMMANDE DE GAINE DYNAMIQUE AVEC LEVÉE D'ANNEAU DE BORD

Numéro de publication WO/2020/112372
Date de publication 04.06.2020
N° de la demande internationale PCT/US2019/061458
Date du dépôt international 14.11.2019
CPC
C23C 16/45544
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45523Pulsed gas flow or change of composition over time
45525Atomic layer deposition [ALD]
45544characterized by the apparatus
C23C 16/4583
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4582Rigid and flat substrates, e.g. plates or discs
4583the substrate being supported substantially horizontally
H01L 21/68735
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
68714the wafers being placed on a susceptor, stage or support
68735characterised by edge profile or support profile
H01L 21/68742
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
68714the wafers being placed on a susceptor, stage or support
68742characterised by a lifting arrangement, e.g. lift pins
H01L 21/68785
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
68714the wafers being placed on a susceptor, stage or support
68785characterised by the mechanical construction of the susceptor, stage or support
H01L 21/68792
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
68714the wafers being placed on a susceptor, stage or support
68792characterised by the construction of the shaft
Déposants
  • LAM RESEARCH CORPORATION [US]/[US]
Inventeurs
  • HIESTER, Javob, Lee
  • BLANK, Richard, M.
  • BAILEY, Curtis, W.
  • JANICKI, Michael., J.
Mandataires
  • HSU, Lin, C.
  • PENILLA, Albert, S.
Données relatives à la priorité
16/205,02829.11.2018US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) DYNAMIC SHEATH CONTROL WITH EDGE RING LIFT
(FR) COMMANDE DE GAINE DYNAMIQUE AVEC LEVÉE D'ANNEAU DE BORD
Abrégé
(EN)
A pedestal assembly including a pedestal for supporting a substrate. A central shaft positions the pedestal at a height during operation. A ring is placed along a periphery of the pedestal. A ring adjuster subassembly includes an adjuster flange disposed around a middle section of the central shaft. The subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed under the pedestal. The subassembly includes ring adjuster pins connected to the adjuster plate and extending vertically from the adjuster plate. Each of the ring adjuster pins being positioned on the adjuster plate at locations adjacent to and outside of a pedestal diameter. The ring adjuster pins contacting an edge undersurface of the ring. The adjuster flange coupled to at least three adjuster actuators for defining an elevation and tilt of the ring relative to a top surface of the pedestal.
(FR)
L'invention concerne un ensemble socle comprenant un socle destiné à supporter un substrat. Un arbre central positionne le socle à une certaine hauteur pendant le fonctionnement. Un anneau est placé le long d'une périphérie du socle. Un sous-ensemble de réglage d'anneau comprend une bride de réglage disposée autour d'une section centrale de l'arbre central. Le sous-ensemble comprend un manchon relié à la bride de réglage et s'étendant de la bride de réglage à une plaque de réglage disposée sous le socle. Le sous-ensemble comprend des broches de réglage d'anneau reliées à la plaque de réglage et s'étendant verticalement à partir de la plaque de réglage. Toutes les broches de réglage d'anneau sont positionnées sur la plaque de réglage à des emplacements adjacents à un diamètre de socle et situés à l'extérieur de ce dernier. Les broches de réglage d'anneau sont en contact avec une surface inférieure de bord de l'anneau. La bride de réglage est accouplée à au moins trois actionneurs de réglage pour définir une élévation et une inclinaison de l'anneau par rapport à une surface supérieure du socle.
Également publié en tant que
Dernières données bibliographiques dont dispose le Bureau international