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1. WO2020061868 - FICHE À SEMI-CONDUCTEUR PROTÉGÉE PAR UNE COUCHE DIÉLECTRIQUE DE PROTECTION DANS UN DISPOSITIF DE MÉMOIRE TRIDIMENSIONNEL ET SON PROCÉDÉ DE FORMATION

Numéro de publication WO/2020/061868
Date de publication 02.04.2020
N° de la demande internationale PCT/CN2018/107790
Date du dépôt international 27.09.2018
CIB
H01L 27/115 2017.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
27Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun
02comprenant des composants semi-conducteurs spécialement adaptés pour le redressement, l'amplification, la génération d'oscillations ou la commutation et ayant au moins une barrière de potentiel ou une barrière de surface; comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
04le substrat étant un corps semi-conducteur
10comprenant une pluralité de composants individuels dans une configuration répétitive
105comprenant des composants à effet de champ
112Structures de mémoires mortes
115Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs
CPC
G11C 16/0483
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
04using variable threshold transistors, e.g. FAMOS
0483comprising cells having several storage transistors connected in series
H01L 27/0688
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
0688Integrated circuits having a three-dimensional layout
H01L 27/101
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
101including resistors or capacitors only
H01L 27/11524
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11521characterised by the memory core region
11524with cell select transistors, e.g. NAND
H01L 27/11551
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11551characterised by three-dimensional arrangements, e.g. with cells on different height levels
H01L 27/11556
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11551characterised by three-dimensional arrangements, e.g. with cells on different height levels
11553with source and drain on different levels, e.g. with sloping channels
11556the channels comprising vertical portions, e.g. U-shaped channels
Déposants
  • YANGTZE MEMORY TECHNOLOGIES CO., LTD. [CN]/[CN]
Inventeurs
  • YANG, Haohao
  • ZHANG, Yong
  • WANG, EnBo
  • ZHANG, Ruo Fang
  • ZHANG, Fushan
  • XU, Qianbing
Mandataires
  • NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD.
Données relatives à la priorité
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) SEMICONDUCTOR PLUG PROTECTED BY PROTECTIVE DIELECTRIC LAYER IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME
(FR) FICHE À SEMI-CONDUCTEUR PROTÉGÉE PAR UNE COUCHE DIÉLECTRIQUE DE PROTECTION DANS UN DISPOSITIF DE MÉMOIRE TRIDIMENSIONNEL ET SON PROCÉDÉ DE FORMATION
Abrégé
(EN)
Embodiments of 3D memory devices with a semiconductor plug protected by a dielectric layer and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including a plurality of interleaved conductor layers and dielectric layers on the substrate, and a memory string extending vertically through the memory stack. The memory string includes a semiconductor plug in a lower portion of the memory string, a protective dielectric layer on the semiconductor plug, and a memory film above the protective dielectric layer and along a sidewall of the memory string.
(FR)
Dans des modes de réalisation, la présente invention concernent des dispositifs de mémoire 3D dotés d'une fiche à semi-conducteur protégée par une couche diélectrique et des procédés pour sa formation. Dans un exemple, un dispositif de mémoire 3D comprend un substrat, un empilement de mémoire comprenant une pluralité de couches conductrices entrelacées et de couches diélectriques sur le substrat, et une chaîne de mémoire s'étendant verticalement à travers l'empilement de mémoire. La chaîne de mémoire comprend une fiche à semi-conducteur dans une partie inférieure de la chaîne de mémoire, une couche diélectrique de protection sur la fiche à semi-conducteur, et un film de mémoire au-dessus de la couche diélectrique de protection et le long d'une paroi latérale de la chaîne de mémoire
Également publié en tant que
CN201880001825.1
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