Traitement en cours

Veuillez attendre...

PATENTSCOPE sera indisponible durant quelques heures pour des raisons de maintenance le samedi 31.10.2020 à 7:00 AM CET
Paramétrages

Paramétrages

Aller à Demande

1. WO2020000597 - PROCÉDÉ ET APPAREIL DE FABRICATION DE DISPOSITIF D'AFFICHAGE

Numéro de publication WO/2020/000597
Date de publication 02.01.2020
N° de la demande internationale PCT/CN2018/100732
Date du dépôt international 16.08.2018
CIB
H01L 21/223 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
02Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
04les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
18les dispositifs ayant des corps semi-conducteurs comprenant des éléments du groupe IV de la classification périodique, ou des composés AIIIBV, avec ou sans impuretés, p.ex. des matériaux de dopage
22Diffusion des impuretés, p.ex. des matériaux de dopage, des matériaux pour électrodes, à l'intérieur ou hors du corps semi-conducteur, ou entre les régions semi-conductrices; Redistribution des impuretés, p.ex. sans introduction ou sans élimination de matériau dopant supplémentaire
223en utilisant la diffusion dans ou hors d'un solide, à partir d'une ou en phase gazeuse
CPC
H01L 21/223
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; ; Interactions between two or more impurities; Redistribution of impurities
223using diffusion into or out of a solid from or into a gaseous phase
H01L 21/2251
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; ; Interactions between two or more impurities; Redistribution of impurities
225using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
2251Diffusion into or out of group IV semiconductors
H01L 21/2254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; ; Interactions between two or more impurities; Redistribution of impurities
225using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
2251Diffusion into or out of group IV semiconductors
2254from or through or into an applied layer, e.g. photoresist, nitrides
H01L 21/3003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
3003Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
H01L 21/67017
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
H01L 27/1248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1248with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
Déposants
  • 武汉华星光电半导体显示技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN]/[CN]
Inventeurs
  • 吕明仁 LU, Ming-jen
Mandataires
  • 深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT & TRADEMARK AGENCY
Données relatives à la priorité
201810670832.226.06.2018CN
Langue de publication chinois (ZH)
Langue de dépôt chinois (ZH)
États désignés
Titre
(EN) DISPLAY DEVICE MANUFACTURING METHOD AND APPARATUS
(FR) PROCÉDÉ ET APPAREIL DE FABRICATION DE DISPOSITIF D'AFFICHAGE
(ZH) 显示器件制造方法及装置
Abrégé
(EN)
Disclosed are a display device manufacturing method and apparatus. The method comprises: step A: forming a display device; step B: placing the display device in a sealed chamber; step C: inputting hydrogen into the sealed chamber, so as to diffuse hydrogen atoms in hydrogen gas into an insulating layer; step D: heating the hydrogen and/or display device in the sealed chamber the hydrogen atoms in the insulating layer are diffused into a semiconductor member. The present invention improves the electrical performance of the semiconductor member.
(FR)
La présente invention porte sur un procédé et sur un appareil de fabrication de dispositif d'affichage. Le procédé comprend les étapes suivantes : l'étape A consistant à former un dispositif d'affichage; l'étape B consistant à placer le dispositif d'affichage dans une chambre étanche; l'étape C consistant à introduire de l'hydrogène dans la chambre étanche de sorte à diffuser des atomes d'hydrogène dans l'hydrogène gazeux dans une couche isolante; l'étape D consistant à chauffer l'hydrogène et/ou le dispositif d'affichage dans la chambre étanche, les atomes d'hydrogène dans la couche isolante étant diffusés dans un élément semi-conducteur. La présente invention améliore la performance électrique de l'élément semi-conducteur.
(ZH)
本发明公开了一种显示器件制造方法及装置。该方法包括:步骤A、形成显示器件;步骤B、将显示器件放置于密封腔室内;步骤C、向密封腔室输入氢气,以使氢气中的氢原子扩散至绝缘层中;步骤D、加热密封腔室内的氢气和/或显示器件,以使绝缘层中的氢原子扩散至半导体构件中。本发明能提高其中的半导体构件的电性表现。
Également publié en tant que
Dernières données bibliographiques dont dispose le Bureau international