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1. WO2016063744 - MODULE DE PUISSANCE

Numéro de publication WO/2016/063744
Date de publication 28.04.2016
N° de la demande internationale PCT/JP2015/078719
Date du dépôt international 09.10.2015
CIB
H01L 21/60 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
02Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
04les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
50Assemblage de dispositifs à semi-conducteurs en utilisant des procédés ou des appareils non couverts par l'un uniquement des groupes H01L21/06-H01L21/326185
60Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
H01L 23/48 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
23Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
48Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
CPC
H01L 2224/05552
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
0555Shape
05552in top view
H01L 2224/05647
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
05599Material
056with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
05638the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
05647Copper [Cu] as principal constituent
H01L 2224/29101
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29101the principal constituent melting at a temperature of less than 400°C
H01L 2224/29109
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29101the principal constituent melting at a temperature of less than 400°C
29109Indium [In] as principal constituent
H01L 2224/29111
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29101the principal constituent melting at a temperature of less than 400°C
29111Tin [Sn] as principal constituent
H01L 2224/29123
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29117the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
29123Magnesium [Mg] as principal constituent
Déposants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
Inventeurs
  • 藤野 純司 FUJINO Junji
  • 内田 祥久 UCHIDA Yoshihisa
  • 小川 翔平 OGAWA Shohei
  • 坂元 創一 SAKAMOTO Soichi
  • 柳本 辰則 YANAGIMOTO Tatsunori
Mandataires
  • 大岩 増雄 OIWA Masuo
Données relatives à la priorité
2014-21337720.10.2014JP
Langue de publication japonais (JA)
Langue de dépôt japonais (JA)
États désignés
Titre
(EN) POWER MODULE
(FR) MODULE DE PUISSANCE
(JA) パワーモジュール
Abrégé
(EN)
 A cladding in which aluminum and copper are overlaid and pressure-welded, wherein when the aluminum side of the cladding is ultrasonically or otherwise bonded to the electrode surface of a power semiconductor element, wire bonding is performed on the copper side of the cladding, thereby forming an electric circuit. Furthermore, heat-treating the cladding in advance at a temperature higher than the operating temperature of the power semiconductor element adequately forms an intermetallic compound at the interface with the aluminum and the copper so that the film does not increase in thickness after the bonding process.
(FR)
 L'invention concerne un revêtement dans lequel de l'aluminium et du cuivre sont superposés et soudés par pression ; quand le côté aluminium du revêtement est soudé par ultrasons ou autrement à la surface d'électrode d'un élément à semi-conducteur de puissance, un soudage de fil est effectué sur le côté cuivre du revêtement, ce qui permet de former un circuit électrique. En outre, un traitement thermique du revêtement à l'avance, à une température supérieure à la température de fonctionnement de l'élément à semi-conducteur de puissance, forme d'une manière adéquate un composé intermétallique à l'interface avec l'aluminium et le cuivre de manière que le film n'augmente pas d'épaisseur après le processus de soudage.
(JA)
 アルミと銅を重ね合わせて圧接したクラッド材について、パワー半導体素子の電極表面にクラッド材のアルミ側を超音波接合などによって接合しておき、クラッド材の銅側にワイヤボンドを行うことで電気回路を形成する。さらにクラッド材をあらかじめパワー半導体素子の動作温度よりも高温で熱処理しておくことで、接合プロセス後に膜厚が成長しないようにアルミ及び銅の各々との界面に金属間化合物を十分に形成しておく。
Également publié en tant que
CN201580043705.4
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