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1. WO2015014082 - SUBSTRAT DE RÉSEAU, SON PROCÉDÉ DE FABRICATION ET APPAREIL D'AFFICHAGE

Numéro de publication WO/2015/014082
Date de publication 05.02.2015
N° de la demande internationale PCT/CN2013/089744
Date du dépôt international 18.12.2013
CIB
H01L 29/786 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
29Dispositifs à semi-conducteurs spécialement adaptés au redressement, à l'amplification, à la génération d'oscillations ou à la commutation et ayant au moins une barrière de potentiel ou une barrière de surface; Condensateurs ou résistances ayant au moins une barrière de potentiel ou une barrière de surface, p.ex. jonction PN, région d'appauvrissement, ou région de concentration de porteurs de charges; Détails des corps semi-conducteurs ou de leurs électrodes
66Types de dispositifs semi-conducteurs
68commandables par le seul courant électrique fourni ou par la seule tension appliquée, à une électrode qui ne transporte pas le courant à redresser, amplifier ou commuter
76Dispositifs unipolaires
772Transistors à effet de champ
78l'effet de champ étant produit par une porte isolée
786Transistors à couche mince
CPC
H01L 21/28176
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
28008Making conductor-insulator-semiconductor electrodes
28017the insulator being formed after the semiconductor body, the semiconductor being silicon
28158Making the insulator
28167on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
28176with a treatment, e.g. annealing, after the formation of the definitive gate conductor
H01L 27/1237
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1237with a different composition, shape, layout or thickness of the gate insulator in different devices
H01L 27/124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
124with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
H01L 29/4908
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
4908for thin film semiconductor, e.g. gate of TFT
H01L 29/517
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
51Insulating materials associated therewith
517the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
H01L 29/66765
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
6675Amorphous silicon or polysilicon transistors
66765Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
Déposants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
Inventeurs
  • 闫梁臣 YAN, Liangchen
Mandataires
  • 北京银龙知识产权代理有限公司 DRAGON INTELLECTUAL PROPERTY LAW FIRM
Données relatives à la priorité
201310326058.030.07.2013CN
Langue de publication chinois (ZH)
Langue de dépôt chinois (ZH)
États désignés
Titre
(EN) ARRAY SUBSTRATE, MANUFACTURING METHOD OF SAME, AND DISPLAY APPARATUS
(FR) SUBSTRAT DE RÉSEAU, SON PROCÉDÉ DE FABRICATION ET APPAREIL D'AFFICHAGE
(ZH) 阵列基板及其制作方法和显示装置
Abrégé
(EN)
Provided are an array substrate, a manufacturing method of the array substrate and a display apparatus, which relate to the technical field of display. A gate electrode and a gate line of the array substrate are coated with a metallic oxide thin film. By means of the present invention, metal atoms in the gate electrode and the gate line can be prevented from being diffused in the array substrate.
(FR)
La présente invention concerne un substrat de réseau, un procédé de fabrication du substrat de réseau et un appareil d'affichage, qui se rapportent au domaine technique de l'affichage. Une électrode de grille et une ligne de grille du substrat de réseau sont revêtues d'une couche mince d'oxyde métallique. La présente invention permet d'empêcher une diffusion d'atomes métalliques de l'électrode de grille et de la ligne de grille dans le substrat de réseau.
(ZH)
提供一种阵列基板及其制作方法和显示装置,属于显示技术领域。该阵列基板的栅电极和栅线的外部包覆有金属氧化物薄膜。通过该方法能够避免栅电极和栅线中的金属原子在阵列基板中发生扩散。
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