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1. WO2012047697 - EMPILEMENTS OXYDE-NITRURE ET OXYDE-SILICIUM DÉPOSÉS PAR PECVD POUR APPLICATIONS DE MÉMOIRE 3D

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CLAIMS

What is claimed is:

1. A method comprising:

(a) placing a substrate in a PECVD chamber;

(b) energizing first process gases into a first plasma;

(c) depositing a layer of a first material on the substrate from the first plasma;

(d) plasma purging the PECVD chamber and exposing a surface of the first material to be conditioned for deposition by the plasma purge;

(e) gas purging the PECVD chamber to remove all gas contaminants;

(f) energizing second process gases into a second plasma;

(g) depositing a layer of a second material on the substrate from the first plasma;

(h) plasma purging the PECVD chamber and exposing a surface of the second material to be conditioned for deposition by the plasma purge;

(i) gas purging the PECVD chamber to remove gas contaminants;

j) maintaining a vacuum in the PECVD chamber throughout steps (b)-(i); and

(k) repeating steps (b)-(j) until a predetermined number of layers of the first material and the second material have been deposited on the substrate.

2. The method of claim 1 wherein the predetermined number of layers of the first material is at least 8 and the predetermined number of layers of the second material is at least 8.

3. The method of claim 1 wherein the gas purging of the PECVD chamber includes

exposing a portion of the PECVD chamber to a purge gas selected from the group of gases consisting of: NH3, N2, and N20, mixtures thereof.

4. The method of claim 1 wherein the first material is silicon and the first process gases include a silicon containing molecule.

5. The method of claim 1 wherein the first material is silicon oxide and the first process gases include a silicon containing molecule and an oxygen containing molecule.

6. The method of claim 1 wherein the first material is silicon nitride and the first process gases include a silicon containing molecule and a nitrogen containing molecule.

7. The method of claim 6 further comprising:

energizing third process gases into a third plasma for surface treatment of the silicon nitride between steps (c) and (d).

8. The method of claim 7 wherein the third process gases include NH3 and N2.

9. A method comprising:

(a) placing a substrate in a PECVD chamber under a vacuum;

(b) energizing first process gases into a first plasma;

(c) depositing a layer of a first material having a first stress on the substrate from the first plasma;

(d) plasma purging to clean the PECVD chamber and exposing a surface of the first material to be conditioned for deposition;

(e) gas purging the PECVD chamber to remove gas contaminants;

(f) energizing a second process gas into a second plasma;

(g) depositing a layer of a second material having a second stress that is approximately equal in magnitude and opposite in direction to the first stress of the first material on the substrate;

(h) plasma purging the PECVD chamber and exposing a surface of the second material to be conditioned for deposition;

(i) gas purging the PECVD chamber to remove gas contaminants;

(j) maintaining a vacuum in the PECVD chamber throughout steps (b)-(i); and

(k) repeating steps (b)-(j) until a predetermined number of layers of the first material and the second material have been deposited on the substrate.

10. The method of claim 9 wherein the predetermined number of layers of the first material 8 or more and the predetermined number of layers of the second material is 8 or more.

1 1. The method of claim 9 wherein the gas purging of the PECVD chamber includes exposing a portion of the PECVD chamber to a purge gas selected from the group of gases consisting of: NH3, N2, and N20, mixtures thereof.

12. The method of claim 9 wherein the first material is silicon and the first processing gases include a silicon containing molecule.

13. The method of claim 9 wherein the first material is silicon oxide and the first processing gases include a silicon containing molecule and an oxygen containing molecule.

14. The method of claim 9 wherein the first material is silicon nitride and the first processing gas includes a silicon containing molecule and a nitrogen containing molecule.

15. The method of claim 14 further comprising:

energizing third process gases into a third plasma for surface treatment of the silicon nitride between steps (c) and (d).

16. The method of claim 15 wherein the third process gases include NH3 and N2.

17. A method comprising:

(a) placing a substrate in a PECVD chamber under a vacuum;

(b) energizing first process gases into a first plasma;

(c) depositing a layer of a first material on the substrate from the first plasma;

(d) adding a dopant precursor to the first process gas;

(e) energizing the first process gases and the dopant precursor into a second plasma;

(f) depositing a layer of a doped silicon on the substrate from the second plasma;

(g) maintaining a vacuum in the PECVD chamber throughout steps (b)-(f); and

(h) repeating steps (b)-(g) until a predetermined number of layers of the first material and the second material have been deposited on the substrate.

18. The method of claim 17 wherein the predetermined number of layers of the first material is at least 8 and the predetermined number of layers of the second material is at least 8.

19. The method of claim 17 wherein the second material is n-type doped silicon and the dopant precursor includes a boron containing molecule.

20. The method of claim 17 wherein the second material is p-type doped silicon and the dopant precursor includes a phosphorus containing molecule.