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1. WO2012023236 - DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION

Numéro de publication WO/2012/023236
Date de publication 23.02.2012
N° de la demande internationale PCT/JP2011/004126
Date du dépôt international 21.07.2011
CIB
H01L 23/34 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
23Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
34Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température
H01L 23/28 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
23Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
28Capsulations, p.ex. couches de capsulation, revêtements
CPC
H01L 21/4878
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
4814Conductive parts
4871Bases, plates or heatsinks
4878Mechanical treatment, e.g. deforming
H01L 2224/32014
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
3201Structure
32012relative to the bonding area, e.g. bond pad
32014the layer connector being smaller than the bonding area, e.g. bond pad
H01L 2224/32245
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32245the item being metallic
H01L 2224/37147
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
36Structure, shape, material or disposition of the strap connectors prior to the connecting process
37of an individual strap connector
37001Core members of the connector
37099Material
371with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
37138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
37147Copper [Cu] as principal constituent
H01L 2224/45014
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
4501Shape
45012Cross-sectional shape
45014Ribbon connectors, e.g. rectangular cross-section
H01L 2224/45124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45117the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
45124Aluminium (Al) as principal constituent
Déposants
  • パナソニック株式会社 PANASONIC CORPORATION [JP]/[JP] (AllExceptUS)
  • 南尾 匡紀 MINAMIO, Masanori (UsOnly)
  • 笹岡 達雄 SASAOKA, Tatsuo (UsOnly)
Inventeurs
  • 南尾 匡紀 MINAMIO, Masanori
  • 笹岡 達雄 SASAOKA, Tatsuo
Mandataires
  • 前田 弘 MAEDA, Hiroshi
Données relatives à la priorité
2010-18460320.08.2010JP
Langue de publication japonais (JA)
Langue de dépôt japonais (JA)
États désignés
Titre
(EN) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(JA) 半導体装置及びその製造方法
Abrégé
(EN)
This semiconductor device comprises: a plate member (13) which has a through hole (15); a metal column (16) which is affixed to the through hole via an insulating member (17) and comprises a projected portion that protrudes from the upper surface of the plate member; a semiconductor element (12) which is affixed to the projected portion; a lead frame (11) which is electrically connected to the semiconductor element; and an outer case (14) that covers the semiconductor element, while at least partially covering the plate member, the metal column and the lead frame. This semiconductor device is characterized in that the lower surface (13b) of the plate member is exposed from the outer case.
(FR)
La présente invention a trait à un dispositif à semi-conducteur qui comprend : un élément de plaque (13) qui est doté d'un trou traversant (15) ; une colonne métallique (16) qui est fixée sur le trou traversant par l'intermédiaire d'un élément isolant (17) et qui comprend une partie en saillie qui fait saillie à partir de la surface supérieure de l'élément de plaque ; un élément semi-conducteur (12) qui est fixé sur la partie en saillie ; une grille de connexion (11) qui est électriquement connectée à l'élément semi-conducteur ; et un boîtier extérieur (14) qui recouvre l'élément semi-conducteur, tout en recouvrant au moins partiellement l'élément de plaque, la colonne métallique et la grille de connexion. Le dispositif à semi-conducteur selon la présente invention est caractérisé en ce que la surface inférieure (13b) de l'élément de plaque est exposée à partir du boîtier extérieur.
(JA)
 本発明に係る半導体装置は、貫通孔(15)を有する板部材(13)と、貫通孔に絶縁性部材(17)を介して固定され、板部材の上面から突出する突出部を含む金属柱(16)と、突出部に固定された半導体素子(12)と、半導体素子と電気的に接続されたリードフレーム(11)と、半導体素子を覆うと共に、板部材、金属柱及びリードフレームの少なくとも一部を覆う外装体(14)とを備えている。板部材の下面(13b)は、外装体から露出したことを特徴とする。
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