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1. WO2012008683 - DISPOSITIF ÉLECTRONIQUE SOUPLE, SON PROCÉDÉ DE FABRICATION ET SUBSTRAT SOUPLE

Numéro de publication WO/2012/008683
Date de publication 19.01.2012
N° de la demande internationale PCT/KR2011/003784
Date du dépôt international 24.05.2011
CIB
H01L 51/56 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
51Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
50spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED)
56Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
H01L 51/52 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
51Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
50spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED)
52Détails des dispositifs
CPC
H01L 2227/326
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2227Indexing scheme for devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate covered by group H01L27/00
32Devices including an organic light emitting device [OLED], e.g. OLED display
326Use of temporary substrate, e.g. for manufacturing of OLED dsiplays having an inorganic driving circuit
H01L 2251/5338
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2251Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
50Organic light emitting devices
53Structure
5338Flexible OLED
H01L 27/1218
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1218with a particular composition or structure of the substrate
H01L 27/1266
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
1262with a particular formation, treatment or coating of the substrate
1266the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
H01L 29/78603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78603characterised by the insulating substrate or support
H01L 51/003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
003using a temporary substrate
Déposants
  • 주식회사 포스코 POSCO [KR/KR]; 경상북도 포항시 남구 괴동동 1번지 1 Koedong-dong, Nam-gu Pohang-si, Kyungsangbook-do 790-300, KR (AllExceptUS)
  • 이종람 LEE, Jong Lam [KR/KR]; KR (UsOnly)
  • 김기수 KIM, Kee Soo [KR/KR]; KR (UsOnly)
Inventeurs
  • 이종람 LEE, Jong Lam; KR
  • 김기수 KIM, Kee Soo; KR
Mandataires
  • 특허법인 씨엔에스 C&S PATENT AND LAW OFFICE; 서울시 강남구 언주로 30길 13 대림아크로텔 7층 7th Floor, Daelim Acrotel 13 Eonju-ro 30-gil Gangnam-gu, Seoul 135-971, KR
Données relatives à la priorité
10-2010-006753313.07.2010KR
Langue de publication coréen (KO)
Langue de dépôt coréen (KO)
États désignés
Titre
(EN) A FLEXIBLE ELECTRONIC DEVICE, METHOD FOR MANUFACTURING SAME, AND A FLEXIBLE SUBSTRATE
(FR) DISPOSITIF ÉLECTRONIQUE SOUPLE, SON PROCÉDÉ DE FABRICATION ET SUBSTRAT SOUPLE
(KO) 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판
Abrégé
(EN)
The present invention relates to resolving the issues concerning the deterioration in the performance and yield of a flexible electronic device, which are caused by low manufacturing temperature, high surface roughness, a high thermal expansion coefficient, and the bad handling characteristics of a typical flexible substrate. The method for manufacturing a flexible electronic device according to the present invention includes: forming a flexible substrate on a motherboard while physically separating the interface therebetween so that the interfacial bonding therebetween has a yield strength less than that of the flexible substrate; and forming an electronic device on the separated surface of the flexible substrate which had previously been in contact with the motherboard.
(FR)
La présente invention porte sur la résolution des problèmes concernant la détérioration des performances et du rendement d'un dispositif électronique souple, qui sont provoqués par une température de fabrication basse, une rugosité de surface élevée, un coefficient d'expansion thermique élevé et les mauvaises caractéristiques de manipulation d'un substrat souple typique. Le procédé de fabrication d'un dispositif électronique souple selon la présente invention comprend : la formation d'un substrat souple sur une carte mère, tout en séparant physiquement l'interface entre eux, de telle sorte que le collage interfacial entre eux a une limite d'élasticité inférieure à celle du substrat souple ; et la formation d'un dispositif électronique sur la surface séparée du substrat souple qui a été auparavant en contact avec la carte mère.
(KO)
본 발명은 기존의 플렉서블 기판의 낮은 공정 가능 온도, 높은 표면거칠기, 높은 열팽창 계수, 나쁜 핸들링 특성의 문제에 따른 플렉서블 전자소자의 성능 및 수율 저하의 문제점을 해결하기 위한 것이다. 본 발명에 따른 플렉서블 전자소자의 제조방법은, 모기판 상에 플렉서블 기판을 형성하는 단계, 상기 플렉서블 기판의 항복 강도보다도 상기 모기판과 상기 플렉서블 기판 사이의 계면 결합력이 작은 상기 플렉서블 기판과 모기판의 계면을 물리적으로 분리시키는 단계 및 상기 모기판과 접촉되어 있던 상기 플렉서블 기판의 분리면 상에 전자소자를 형성하는 단계를 포함하는 플렉서블 전자소자의 제조방법. 포함하는 것을 특징으로 한다.
Dernières données bibliographiques dont dispose le Bureau international