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Paramétrages

1. WO2012007435 - SUBSTRAT TEMPORAIRE, PROCÉDÉ DE TRAITEMENT ET PROCÉDÉ DE PRODUCTION

Numéro de publication WO/2012/007435
Date de publication 19.01.2012
N° de la demande internationale PCT/EP2011/061779
Date du dépôt international 11.07.2011
CIB
H01L 21/683 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
67Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
683pour le maintien ou la préhension
CPC
H01L 21/6835
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6835using temporarily an auxiliary support
H01L 2221/68318
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
H01L 2221/6835
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
6835used as a support during build up manufacturing of active devices
H01L 2221/68368
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68368used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
H01L 2221/68381
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Y10T 156/10
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
156Adhesive bonding and miscellaneous chemical manufacture
10Methods of surface bonding and/or assembly therefor
Déposants
  • SOITEC [FR/FR]; Parc Technologique des Fontaines Chemin des Franques F-38190 Bernin, FR (AllExceptUS)
  • RIOU, Grégory [FR/FR]; FR (UsOnly)
Inventeurs
  • RIOU, Grégory; FR
Mandataires
  • COLLIN, Jérôme; Cabinet REGIMBEAU 20, rue de Chazelles F-75847 Paris Cedex 17, FR
Données relatives à la priorité
105576715.07.2010FR
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) TEMPORARY SUBSTRATE, PROCESSING METHOD AND PRODUCTION METHOD
(FR) SUBSTRAT TEMPORAIRE, PROCÉDÉ DE TRAITEMENT ET PROCÉDÉ DE PRODUCTION
Abrégé
(EN)
The present invention relates to a temporary substrate (100) for the processing of an original substrate (5), characterized in that it comprises a surface layer (2) having a plurality of inserts (3) consisting of a material having a coefficient of thermal expansion different from that of the material constituting the rest of the surface layer (2).Due to their different coefficient of thermal expansion, the inserts aid separation of the temporary substrate from the original substrate during a heat treatment detaching step. The present invention also relates to an original substrate processing method and a temporary substrate production method for this purpose.
(FR)
La présente invention porte sur un substrat temporaire (100) pour le traitement d'un substrat original (5), lequel substrat est caractérisé en ce qu'il comprend une couche de surface (2) ayant une pluralité d'inserts (3) constitués en un matériau ayant un coefficient de dilatation thermique différent de celui du matériau constituant le reste de la couche de surface (2). Du fait du coefficient de dilatation thermique différent, les inserts aident à la séparation du substrat temporaire à partir du substrat original durant une étape de détachement en traitement thermique. La présente invention porte également sur un procédé de traitement de substrat original et sur un procédé de production de substrat temporaire dans ce but.
Dernières données bibliographiques dont dispose le Bureau international