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1. WO2012006222 - CAPTEUR CHIMIQUEMENT SENSIBLE DOTÉ DE DRAINS LÉGÈREMENT DOPÉS

Numéro de publication WO/2012/006222
Date de publication 12.01.2012
N° de la demande internationale PCT/US2011/042665
Date du dépôt international 30.06.2011
CIB
H01L 21/00 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
CPC
G01N 27/414
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
403Cells and electrode assemblies
414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
G01N 27/4145
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
403Cells and electrode assemblies
414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
4145specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
H01L 27/11517
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
H01L 29/6659
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66568Lateral single gate silicon transistors
66575where the source and drain or source and drain extensions are self-aligned to the sides of the gate
6659with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
H01L 29/788
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
788with floating gate
Déposants
  • LIFE TECHNOLOGIES CORPORATION [US/US]; 5791 Van Allen Way Carlsbad, California 92008, US (AllExceptUS)
  • FIFE, Keith, Glen [US/US]; US (UsOnly)
Inventeurs
  • FIFE, Keith, Glen; US
Mandataires
  • HAMMOND, Alan, W.; Life Technologies Corporation Attention: IP Department 5791 Van Allen Way Carlsbad, CA 92008, US
Données relatives à la priorité
61/361,40303.07.2010US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) CHEMICALLY SENSITIVE SENSOR WITH LIGHTLY DOPED DRAINS
(FR) CAPTEUR CHIMIQUEMENT SENSIBLE DOTÉ DE DRAINS LÉGÈREMENT DOPÉS
Abrégé
(EN)
A chemically sensitive sensor with a lightly doped region that affects an overlap capacitance between a gate and an electrode of the chemical sensitive sensor. The lightly doped region extends beneath and adjacent to a gate region of the chemical sensitive sensor. Modifying the gain of the chemically sensitive sensor is achieved by manipulating the lightly doped region under the electrodes.
(FR)
La présente invention a trait à un capteur chimiquement sensible doté d'une zone légèrement dopée qui a un effet sur la capacité de chevauchement entre une grille et une électrode du capteur chimiquement sensible. La zone légèrement dopée s'étend sous une zone de grille du capteur chimiquement sensible et est adjacente à ladite zone de grille. Il est possible de modifier le gain du capteur chimiquement sensible en manipulant la zone légèrement dopée sous les électrodes.
Également publié en tant que
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