Traitement en cours

Veuillez attendre...

Paramétrages

Paramétrages

1. WO2012005014 - DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEUR

Numéro de publication WO/2012/005014
Date de publication 12.01.2012
N° de la demande internationale PCT/JP2011/003948
Date du dépôt international 08.07.2011
CIB
H01L 27/146 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
27Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun
14comprenant des composants semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement
144Dispositifs commandés par rayonnement
146Structures de capteurs d'images
CPC
G02F 1/136227
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
136227Through-hole connection of the pixel electrode to the active element through an insulation layer
G02F 1/136286
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
136286Wiring, e.g. gate line, drain line
H01L 27/14632
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14632Wafer-level processed structures
H01L 27/14636
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14636Interconnect structures
H01L 27/14638
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14638Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
H01L 27/14643
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
Déposants
  • パナソニック株式会社 PANASONIC CORPORATION [JP/JP]; 大阪府門真市大字門真1006番地 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501, JP (AllExceptUS)
  • 松長 誠之 MATSUNAGA, Yoshiyuki; null (UsOnly)
Inventeurs
  • 松長 誠之 MATSUNAGA, Yoshiyuki; null
Mandataires
  • 新居 広守 NII, Hiromori; 大阪府大阪市淀川区西中島5丁目3番10号タナカ・イトーピア新大阪ビル6階新居国際特許事務所内 c/o NII Patent Firm, 6F, Tanaka Ito Pia Shin-Osaka Bldg.,3-10, Nishi Nakajima 5-chome, Yodogawa-ku, Osaka-city, Osaka 5320011, JP
Données relatives à la priorité
2010-15728909.07.2010JP
Langue de publication japonais (JA)
Langue de dépôt japonais (JA)
États désignés
Titre
(EN) SOLID-STATE IMAGING DEVICE
(FR) DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEUR
(JA) 固体撮像装置
Abrégé
(EN)
Provided is a laminated solid-state imaging device that is capable of minimizing mixed signals between unit pixel cells due to electrical capacitive coupling. A unit pixel cell (13) comprises: a photoelectric conversion layer (6) and a pixel electrode (5) formed on a silicon substrate (1); an amplifying transistor (10) that is formed inside the silicon substrate (1), and outputs a signal voltage based on the potential of the pixel electrode (5); and a reset transistor (11) that is formed inside the silicon substrate (1), and resets the potential of a gate electrode (3) of the amplifying transistor (10). The solid-state imaging device is provided with: vertical signal lines (17) that are disposed so as to correspond to columns of unit pixel cells (13), and transmit the signal voltages of the corresponding column of unit pixel cells (13); and a vertical scanning unit (15) that selects rows of unit pixel cells (13) to output signal voltages to the vertical signal lines (17). Each vertical signal line (17) is positioned below the pixel electrodes (5) of the unit pixel cells (13) corresponding to the vertical signal line (17).
(FR)
L'invention concerne un dispositif d'imagerie à semi-conducteur stratifié qui permet de réduire au minimum les signaux mixtes entre des cellules de pixels unitaires grâce à un couplage électrique capacitif. Une cellule de pixels unitaires (13) comprend : une couche de conversion photoélectrique (6) et une électrode de pixel (5) formées sur un substrat en silicium (1) ; un transistor d'amplification (10) qui est formé à l'intérieur du substrat de silicium (1) et qui émet une tension de signal basée sur le potentiel de l'électrode de pixel (5) ; et un transistor de remise à zéro (11) qui est formé à l'intérieur du substrat de silicium (1) et qui remet à zéro le potentiel d'une électrode de grille (3) du transistor d'amplification (10). Le dispositif d'imagerie à semi-conducteur présente : des lignes de signal verticales (17) qui sont agencées de manière à correspondre aux colonnes de cellules de pixels (13) ; et une unité de balayage verticale (15) qui sélectionne des rangées de cellules de pixels unitaires (13) pour émettre les tensions de signal vers les lignes de signal verticales (17). Chaque ligne de signal verticale (17) est placée au-dessous des électrodes de pixel (5) des cellules de pixels unitaires (13) correspondant à la ligne de signal verticale (17).
(JA)
 本発明は、電気的容量結合による単位画素セル間の信号混合を抑えることが可能な積層型の固体撮像装置を提供することを目的とする。単位画素セル(13)は、シリコン基板(1)上に形成された光電変換膜(6)及び画素電極(5)と、シリコン基板(1)内に形成され、画素電極(5)の電位に応じた信号電圧を出力する増幅トランジスタ(10)と、シリコン基板(1)内に形成され、増幅トランジスタ(10)のゲート電極(3)の電位をリセットするリセットトランジスタ(11)とを有し、固体撮像装置は、単位画素セル(13)の列に対応して設けられ、対応する列の単位画素セル(13)の信号電圧を伝達する垂直信号線(17)と、垂直信号線(17)に信号電圧を出力させる単位画素セル(13)の行を選択する垂直走査部(15)とを備え、垂直信号線(17)はそれに対応する単位画素セル(13)の画素電極(5)の下方に位置する。
Dernières données bibliographiques dont dispose le Bureau international