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1. WO2012002974 - TRANSISTORS À COUCHES MINCES

Numéro de publication WO/2012/002974
Date de publication 05.01.2012
N° de la demande internationale PCT/US2010/040924
Date du dépôt international 02.07.2010
CIB
H01L 29/786 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
29Dispositifs à semi-conducteurs spécialement adaptés au redressement, à l'amplification, à la génération d'oscillations ou à la commutation et ayant au moins une barrière de potentiel ou une barrière de surface; Condensateurs ou résistances ayant au moins une barrière de potentiel ou une barrière de surface, p.ex. jonction PN, région d'appauvrissement, ou région de concentration de porteurs de charges; Détails des corps semi-conducteurs ou de leurs électrodes
66Types de dispositifs semi-conducteurs
68commandables par le seul courant électrique fourni ou par la seule tension appliquée, à une électrode qui ne transporte pas le courant à redresser, amplifier ou commuter
76Dispositifs unipolaires
772Transistors à effet de champ
78l'effet de champ étant produit par une porte isolée
786Transistors à couche mince
G02F 1/136 2006.01
GPHYSIQUE
02OPTIQUE
FDISPOSITIFS OU SYSTÈMES DONT LE FONCTIONNEMENT OPTIQUE EST MODIFIÉ PAR CHANGEMENT DES PROPRIÉTÉS OPTIQUES DU MILIEU CONSTITUANT CES DISPOSITIFS OU SYSTÈMES ET DESTINÉS À LA COMMANDE DE L'INTENSITÉ, DE LA COULEUR, DE LA PHASE, DE LA POLARISATION OU DE LA DIRECTION DE LA LUMIÈRE, p.ex. COMMUTATION, OUVERTURE DE PORTE, MODULATION OU DÉMODULATION; TECHNIQUES NÉCESSAIRES AU FONCTIONNEMENT DE CES DISPOSITIFS OU SYSTÈMES; CHANGEMENT DE FRÉQUENCE; OPTIQUE NON LINÉAIRE; ÉLÉMENTS OPTIQUES LOGIQUES; CONVERTISSEURS OPTIQUES ANALOGIQUES/NUMÉRIQUES
1Dispositifs ou systèmes pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire
01pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur
13basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
133Dispositions relatives à la structure; Excitation de cellules à cristaux liquides; Dispositions relatives aux circuits
136Cellules à cristaux liquides associées structurellement avec une couche ou un substrat semi-conducteurs, p.ex. cellules faisant partie d'un circuit intégré
CPC
H01L 27/1225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1222with a particular composition, shape or crystalline structure of the active layer
1225with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
H01L 29/66742
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
H01L 29/78606
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78606with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
H01L 29/7869
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
7869having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
H01L 29/78696
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78696characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Déposants
  • HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; 11445 Compaq Center Drive W. Houston, Texas 77070, US (AllExceptUS)
  • KNUTSON, Chris [US/US]; US (UsOnly)
  • PRESLEY, Rick [US/US]; US (UsOnly)
  • WAGER, John F. [US/US]; US (UsOnly)
  • KESZLER, Douglas [US/US]; US (UsOnly)
  • HOFFMAN, Randy [US/US]; US (UsOnly)
Inventeurs
  • KNUTSON, Chris; US
  • PRESLEY, Rick; US
  • WAGER, John F.; US
  • KESZLER, Douglas; US
  • HOFFMAN, Randy; US
Mandataires
  • ORMISTON, Steven R.; Hewlett-Packard Company Intellectual Property Administration 3404 E. Harmony Road Mail Stop 35 Fort Collins, Colorado 80528-9599, US
Données relatives à la priorité
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) THIN FILM TRANSISTORS
(FR) TRANSISTORS À COUCHES MINCES
Abrégé
(EN)
A thin-film transistor (10, 10') includes a gate electrode (14), a gate dielectric (16) disposed on the gate electrode (14), a channel layer (18), and a passivation layer (24). The channel layer (18) has a first surface (SF) and an opposed second surface (SB), where the first surface (SF) is disposed over at least a portion of the gate dielectric (16). The channel layer (18) also has a first oxide composition including at least one predetermined cation. The passivation layer (24) is disposed adjacent to at least a portion of the opposed second surface (SB) of the channel layer (18). The passivation layer (24) has a second oxide composition including the at least one predetermined cation of the first oxide composition and at least one additional cation that increases a bandgap of the passivation layer (24) relative to the channel layer (18).
(FR)
L'invention concerne un transistor à couches minces (10, 10') comprenant une électrode de grille (14), un diélectrique de grille (16) placé sur l'électrode de grille (14), une couche de canal (18) et une couche de passivation (24). La couche de canal (18) possède une première surface (SF) et une seconde surface opposée (SB), la première surface (SF) étant disposée au-dessus d'au moins une partie du diélectrique de grille (16). La couche de canal (18) possède également une première composition d'oxyde comprenant au moins un cation prédéterminé. La couche de passivation (24) est implantée adjacente à au moins une partie de la seconde surface opposée (SB) de la couche de canal (18). La couche de passivation (24) possède une seconde composition d'oxyde qui inclut ledit ou lesdits cations prédéterminés de la première composition et au moins un autre cation qui augmente la bande interdite de la couche de passivation (24) par rapport à la couche de canal (18).
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