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1. WO2011062789 - DISPOSITIFS ET SYSTÈMES ÉLECTRONIQUES, ET LEURS PROCÉDÉS DE FABRICATION ET D'UTILISATION

Numéro de publication WO/2011/062789
Date de publication 26.05.2011
N° de la demande internationale PCT/US2010/055762
Date du dépôt international 08.11.2010
CIB
H01L 29/02 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
29Dispositifs à semi-conducteurs spécialement adaptés au redressement, à l'amplification, à la génération d'oscillations ou à la commutation et ayant au moins une barrière de potentiel ou une barrière de surface; Condensateurs ou résistances ayant au moins une barrière de potentiel ou une barrière de surface, p.ex. jonction PN, région d'appauvrissement, ou région de concentration de porteurs de charges; Détails des corps semi-conducteurs ou de leurs électrodes
02Corps semi-conducteurs
CPC
H01L 21/26513
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
26506in group IV semiconductors
26513of electrically active species
H01L 21/823807
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8238Complementary field-effect transistors, e.g. CMOS
823807with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
H01L 21/823892
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8238Complementary field-effect transistors, e.g. CMOS
823892with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
H01L 27/0207
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0207Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
H01L 27/092
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
092complementary MIS field-effect transistors
H01L 29/105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
1025Channel region of field-effect devices
1029of field-effect transistors
1033with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
105with vertical doping variation
Déposants
  • SUVOLTA, INC. [US]/[US] (AllExceptUS)
  • THOMPSON, Scott, E. [US]/[US] (UsOnly)
  • THUMMALAPALLY, Damodar, R. [US]/[US] (UsOnly)
Inventeurs
  • THOMPSON, Scott, E.
  • THUMMALAPALLY, Damodar, R.
Mandataires
  • FISH, Charles, S.
Données relatives à la priorité
12/708,49718.02.2010US
61/262,12217.11.2009US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) ELECTRONIC DEVICES AND SYSTEMS,AND METHODS FOR MAKING AND USING THE SAME
(FR) DISPOSITIFS ET SYSTÈMES ÉLECTRONIQUES, ET LEURS PROCÉDÉS DE FABRICATION ET D'UTILISATION
Abrégé
(EN)
A suite of novel structures and methods is provided to reduce power consumption in a wide array of electronic devices and systems Some of these structures and methods can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology, allowing the semiconductor industry as well as the broader electronics industry to avoid a costly and risky switch to alternative technologies As will be discussed, some of the structures and methods relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced sigma VT compared to conventional bulk CMOS and can allow the threshold voltage VT of FETs having dopants in the channel region to be set much more precisely The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors
(FR)
L'invention porte sur une gamme de nouvelles structures et de nouveaux procédés permettant de réduire la consommation d'énergie dans un large éventail de dispositifs et des systèmes électroniques. Certaines de ces structures et certains de ces procédés peuvent être largement mis en œuvre par réutilisation des flux de traitement et de la technologie de fabrication CMOS en volume existants, permettant à l'industrie des semi-conducteurs ainsi qu'à la plus vaste industrie de l'électronique d'éviter un basculement coûteux et risqué vers des technologies de remplacement. D'une façon qui sera discutée, certaines des structures et certains des procédés concernent une conception de canal à appauvrissement profond (DDC), permettant à des dispositifs CMOS d'avoir une valeur sigma VT réduite par comparaison à des dispositifs CMOS en volume classiques, et peuvent permettre de régler beaucoup plus précisément la tension de seuil VT de transistor à effet de champ (FET) ayant des dopants dans la région de canal. La conception DDC peut également avoir un fort effet de corps par comparaison à des transistors CMOS en volume classiques, ce qui peut permettre une maîtrise dynamique importante de la consommation d'énergie dans des transistors DDC.
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