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1. WO2010027606 - CELLULES SOLAIRES AU SILICIUM AMORPHE AMELIORE

Numéro de publication WO/2010/027606
Date de publication 11.03.2010
N° de la demande internationale PCT/US2009/053351
Date du dépôt international 11.08.2009
CIB
H01L 31/0376 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
31Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
0248caractérisés par leurs corps semi-conducteurs
036caractérisés par leur structure cristalline ou par l'orientation particulière des plans cristallins
0376comprenant des semi-conducteurs amorphes
CPC
H01L 31/03767
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0376including amorphous semiconductors
03762including only elements of Group IV of the Periodic System
03767presenting light-induced characteristic variations, e.g. Staebler-Wronski effect
H01L 31/03921
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0392including thin films deposited on metallic or insulating substrates ; ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
03921including only elements of Group IV of the Periodic System
H01L 31/202
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
20such devices or parts thereof comprising amorphous semiconductor materials
202including only elements of Group IV of the Periodic System
Y02E 10/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
Y02P 70/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
70Climate change mitigation technologies in the production process for final industrial or consumer products
50Manufacturing or production processes characterised by the final manufactured product
Déposants
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US]/[US] (AllExceptUS)
  • GROSSMAN, Jeffrey, C. [US]/[US] (UsOnly)
  • ZETTL, Alexander, K. [US]/[US] (UsOnly)
  • WAGNER, Lucas [US]/[US] (UsOnly)
Inventeurs
  • GROSSMAN, Jeffrey, C.
  • ZETTL, Alexander, K.
  • WAGNER, Lucas
Mandataires
  • ASTON, David, J.
Données relatives à la priorité
61/091,37923.08.2008US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) IMPROVED AMORPHOUS SILICON SOLAR CELLS
(FR) CELLULES SOLAIRES AU SILICIUM AMORPHE AMELIORE
Abrégé
(EN)
The present invention provides novel strategies for mitigating the Staebler-Wronski Effect (SWE), that is, the light induced degradation in performance of photoconductivity in amorphous silicon. Materials according to the present invention include alloys or composites of amorphous silicon which affect the elasticity of the materials, amorphous silicon that has been grown on a flexed substrate, compression sandwiched comprising amorphous silicon, and amorphous silicon containing nanoscale features that allow stress to be relieved. The composites are formed with nanoparticles such as nanocrystals and nanotubes. Preferred are boron nitride nanotubes (BNNT) including those that have been surface modified.
(FR)
L'invention concerne de nouvelles stratégies visant à atténuer l'effet Staebler-Wronski, à savoir la dégradation induite par la lumière de la photoconductivité du silicium amorphe. Les matériaux selon l'invention comprennent des alliages ou des composites de silicium amorphe qui modifient l'élasticité des matériaux, du silicium amorphe qui a été mis en croissance sur un substrat courbé, du silicium amorphe mis en sandwich par compression et du silicium amorphe contenant des éléments à nanoéchelle permettant d'éliminer les contraintes. Les composites selon l'invention sont constitués de nanoparticules, telles que des nanocristaux et des nanotubes, de préférence des nanotubes de nitrure de bore (BNNT), notamment ceux qui présente des modifications de surface.
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