| H | ELECTRICITY |
| 01 | BASIC ELECTRIC ELEMENTS |
| L | SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR |
| 29 | Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor |
| 02 | Semiconductor bodies ; ; Multistep manufacturing processes therefor |
| 06 | characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions |
| 0603 | characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions |
| 0607 | for preventing surface leakage or controlling electric field concentration |
| 0611 | for increasing or controlling the breakdown voltage of reverse biased devices |
| 0615 | by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] |
| 0619 | with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction |
| 0623 | Buried supplementary region, e.g. buried guard ring |