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1. (WO2008055007) PROCÉDÉS DE FABRICATION D'UNE COUCHE BARRIÈRE DE COMPOSITION VARIABLE POUR LA MÉTALLISATION CUIVRE
Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

CLAIMS

1. A method of depositing a barrier layer on an interconnect structure, comprising:
(a) providing an atomic layer deposition environment;
(b) depositing a barrier layer on the interconnect structure with a first nitrogen concentration during a first phase of deposition in the atomic layer deposition environment; and
(c) continuing the deposition of the barrier layer on the interconnect structure with a second nitrogen concentration during a second phase deposition in the atomic layer deposition environment.

2. The method of claim 1, wherein the first nitrogen concentration is higher than the second nitrogen concentration.

3. The method of claim 1, wherein step (b) repeats until reaching a targeted first barrier layer thickness, and step (c) repeats reaching a targeted second barrier layer thickness

4. The method of claim 1, further comprising:
(d) continuing the deposition of the barrier layer on the interconnect structure with a third nitrogen concentration during a third phase deposition in the atomic layer deposition environment, wherein the third phase deposition is after the second phase deposition.

5. The method of claim 3, wherein the nitrogen concentration step-wisely decreases from the first nitrogen concentration in the first phase of the barrier layer to the second nitrogen concentration in the second phase of the barrier layer.

6. The method of claim 1, wherein the barrier layer is formed by sequentially pulsing a barrier metal precursor and a nitrogen precursor on the interconnect structure.

7. The method of claim 6, wherein after each pulse of barrier metal precursor and after each nitrogen precursor there is a pulse of a purging gas.

8. The method of claim 6, wherein the nitrogen precursor is plasmarized.

9. The method of claim 7, wherein the purging gas is plasmarized.

10. The method of claim 1, wherein the thickness of the barrier layer is between about 10 angstroms to about 50 angstroms.

11. The method of claim 1, wherein the deposition process temperature is between about 1000C to about 4000C.

12. The method of claim 1, wherein the barrier metal in the barrier layer is selected from the group consisting of tantalum (Ta), titanium (Ti), tungsten (W), zirconium (Zr), hafnium (Hf), molybdenum (Mo), niobium (Nb), vanadium (V), ruthenium (Ru) and chromium (Cr).

13. The method of claim 12, wherein the barrier metal precursor is one of pentaethylmethylamino -tantalum (PEMAT), pentadiethylamino-tantalum (PDEAT), pentadimethyl amino-tantalum (PDMAT), tertbutylimido-tris(diethylamido)-tantalum (TBTDET), tertbutylimido-tris(dimethylamido)-tantalum (TBTDMT), tertbutylimido-tris(ethylmethylamido)-tantalum (TBTEMT), and tantalum halides TaX5, wherein X is fluorine (F), bromine (Br) or chlorine (Cl), and any and all derivatives thereof.

14. The method of claim 7, wherein purging gas is one of helium (He), neon (Ne), argon (Ar), hydrogen (H2), nitrogen (N2), and combinations thereof.

15. The method of claim 7, wherein the nitrogen precursor is one of ammonia (NH3), N2, NO, and NxHy; wherein x and y are integers.

16. A method of depositing a barrier layer on an interconnect structure in an atomic layer deposition system, comprising: depositing a barrier layer with the continuously decreasing nitrogen concentration with increase of film thickness on the interconnect structure in the atomic layer deposition system.

17. The method of claim 16, wherein the barrier layer is deposited by performing a plurality of cycles of sequential pulsing of a barrier metal precursor, a purging gas, a nitrogen-containing reactant and the purging gas, wherein the nitrogen-containing gas reacts with the barrier metal precursor to form the barrier layer.

18. The method of claim 17, wherein the duration or the concentration of the nitrogen-containing gas decreases with each cycle of the sequential pulsing.

19. A method of depositing a barrier layer on an interconnect structure in an atomic layer deposition system, comprising:
depositing a barrier layer with the step-wise decreasing nitrogen concentration with increase of film thickness on the interconnect structure in the atomic layer deposition system.

20. The method of claim 19, wherein the barrier layer is deposited by performing a plurality of cycles of sequential pulsing of a barrier metal precursor, a purging gas, a nitrogen-containing reactant with a first duration and a first concentration and the purging gas, wherein the nitrogen-containing gas with the first duration and the first concentration reacts with the barrier metal precursor to form the barrier layer with a first nitrogen concentration.

21. The method of claim 20, wherein the barrier layer deposition is followed by performing a plurality of cycles of sequential pulsing of the barrier metal precursor, the purging gas, a nitrogen-containing reactant with a second duration and a second concentration and the purging gas, wherein the nitrogen-containing gas with the second duration and the second concentration reacts with the barrier metal precursor to form the barrier layer with a second nitrogen concentration.

22. The method of 20, wherein the second duration is shorter than the first duration or the second concentration is lower than the first concentration.

23. The method of claim 19, wherein the barrier layer is deposited by performing a plurality of cycles of sequential pulsing of a barrier metal precursor, a purging gas, a first nitrogen-containing reactant and the purging gas, wherein the first nitrogen-containing gas reacts with the barrier metal precursor to form the barrier layer with a first nitrogen concentration.

24. The method of claim 23, wherein the barrier layer deposition is followed by performing a plurality of cycles of sequential pulsing of the barrier metal precursor, the purging gas, a second nitrogen-containing reactant and the purging gas, wherein the second nitrogen-containing gas reacts with the barrier metal precursor to form the barrier layer with a second nitrogen concentration and the second nitrogen concentration is lower than the first nitrogen concentration,

25. The method of claim 19, wherein the barrier layer is deposited by performing a plurality of cycles of sequential pulsing of a first barrier metal precursor, a purging gas, a nitrogen-containing reactant and the purging gas, wherein the first nitrogen-containing gas reacts with the first barrier metal precursor to form the barrier layer with a first nitrogen concentration.

26. The method of claim 25, wherein the barrier layer deposition is followed by performing a plurality of cycles of sequential pulsing of a second barrier metal precursor, a purging gas, a nitrogen-containing reactant and the purging gas, wherein the nitrogen-containing gas reacts with the second barrier metal precursor to form the barrier layer with a second nitrogen concentration and the second nitrogen concentration is lower than the first nitrogen concentration.