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Paramétrages

Paramétrages

1. WO2007145074 - COMPOSANT ÉLECTRONIQUE

Numéro de publication WO/2007/145074
Date de publication 21.12.2007
N° de la demande internationale PCT/JP2007/060885
Date du dépôt international 29.05.2007
CIB
H01L 23/12 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
23Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
12Supports, p.ex. substrats isolants non amovibles
H01L 23/34 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
23Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
34Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température
H01L 33/48 2010.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
33Dispositifs à semi-conducteurs ayant au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Détails
48caractérisés par les éléments du boîtier des corps semi-conducteurs
H01L 33/64 2010.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
33Dispositifs à semi-conducteurs ayant au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Détails
48caractérisés par les éléments du boîtier des corps semi-conducteurs
64Éléments d'extraction de la chaleur ou de refroidissement
CPC
H01L 2224/32225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2224/45124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45117the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
45124Aluminium (Al) as principal constituent
H01L 2224/45139
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
45139Silver (Ag) as principal constituent
H01L 2224/45144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
45144Gold (Au) as principal constituent
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/48227
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
48221the body and the item being stacked
48225the item being non-metallic, e.g. insulating substrate with or without metallisation
48227connecting the wire to a bond pad of the item
Déposants
  • 三洋電機株式会社 Sanyo Electric CO., LTD. [JP/JP]; 〒5708677 大阪府守口市京阪本通2丁目5番5号 Osaka 5-5, Keihanhondori 2-chome Moriguchi-Shi, Osaka 5708677, JP (AllExceptUS)
  • 松岡 洋一 MATSUOKA, Yoichi [JP/JP]; JP
  • 中原 利典 NAKAHARA, Toshinori [JP/JP]; JP (UsOnly)
  • 瀧川 惠子 TAKIGAWA, Keiko [JP/JP]; JP (UsOnly)
  • 松本 章寿 MATSUMOTO, Akihisa [JP/JP]; JP (UsOnly)
Inventeurs
  • 松岡 洋一 MATSUOKA, Yoichi; JP
  • 中原 利典 NAKAHARA, Toshinori; JP
  • 瀧川 惠子 TAKIGAWA, Keiko; JP
  • 松本 章寿 MATSUMOTO, Akihisa; JP
Mandataires
  • 井上 温 INOUE, Atsushi; 〒5400032 大阪府大阪市中央区天満橋京町2-6天満橋八千代ビル別館5階 Osaka 5F, Tenmabashi-Yachiyo Bldg. Bekkan 2-6, Tenmabashi-Kyomachi, Chuo-Ku Osaka-Shi, Osaka 5400032, JP
Données relatives à la priorité
2006-16617515.06.2006JP
Langue de publication japonais (JA)
Langue de dépôt japonais (JA)
États désignés
Titre
(EN) ELECTRONIC COMPONENT
(FR) COMPOSANT ÉLECTRONIQUE
(JA) 電子部品
Abrégé
(EN)
An electronic component (1) is provided with a circuit board (2) having a plurality of electrodes on the upper and lower planes of an insulating substrate, and a circuit element (7) fixed to the upper plane of the circuit board (2). The electronic component is also provided with an upper electrode (4) whereupon a circuit element (7) is to be arranged; a through hole (13) penetrating the insulating substrate (12); and a lower electrode (15), which is formed on the lower side ranging from a first side end (20A) of the circuit board (2) to a second side end (20B) facing the first side end (20A) and carries electricity to the upper electrode (4) through the through hole (13).
(FR)
La présente invention concerne un composant électronique (1) muni c'une carte à circuit (2) ayant une pluralité d'électrodes sur les plans supérieur et inférieur d'un substrat isolant, ainsi qu'un élément de circuit (7) fixé sur le plan supérieur de la carte de circuit (2). Le composant électronique est également muni d'une électrode supérieure (4) sur laquelle un élément de circuit (7) doit être placé, d'un orifice traversant (13) pénétrant dans le substrat isolant (12) et d'une électrode inférieure (15), formée sur le côté inférieur allant d'une première extrémité latérale (20A) de la carte de circuit (2) sur une seconde extrémité latérale(20B) faisant face à la première (20A) et qui transporte l'électricité sur l'électrode supérieure (4) via l'orifice traversant (13).
(JA)
 絶縁基板の上下面に複数の電極を有した回路基板2と、回路基板2の上面に固定した回路素子7とを備えた電子部品1において、回路素子7が設置される上面電極4と、絶縁基板12を貫通する貫通孔13と、回路基板2の第1側縁20Aから第1側縁20Aに対向する第2側縁20Bに至る範囲の下面側に形成されるとともに貫通孔13を介して上面電極4に導通する下面電極15とを設けた。
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