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1. WO2007143466 - DISPOSITIF SEMICONDUCTEUR RÉALISÉ AU MOYEN D'UN CONTRÔLE DE PROCESSUS DE MICROSTRUCTURE MÉTALLIQUE

Numéro de publication WO/2007/143466
Date de publication 13.12.2007
N° de la demande internationale PCT/US2007/069950
Date du dépôt international 30.05.2007
CIB
H01L 21/00 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
CPC
H01L 21/02068
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02057Cleaning during device manufacture
02068during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
H01L 21/28079
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
28008Making conductor-insulator-semiconductor electrodes
28017the insulator being formed after the semiconductor body, the semiconductor being silicon
28026characterised by the conductor
28079the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
H01L 21/3003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
3003Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
H01L 21/321
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
H01L 21/823842
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8238Complementary field-effect transistors, e.g. CMOS
823828with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
823842gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
Déposants
  • TEXAS INSTRUMENTS INCORPORATED [US/US]; P.O. Box 655474 Mail Station 3999 Dallas, TX 75265-5474, US (AllExceptUS)
  • COLOMBO, Luigi [US/US]; US (UsOnly)
  • CHAMBERS, James, J. [US/US]; US (UsOnly)
  • VISOKAY, Mark, R. [US/US]; US (UsOnly)
Inventeurs
  • COLOMBO, Luigi; US
  • CHAMBERS, James, J.; US
  • VISOKAY, Mark, R.; US
Mandataires
  • FRANZ, Warren, L. ; Texas Instruments Incorporated P.O. Box 655474, MS 3999 Dallas, TX 75265-5474, US
Données relatives à la priorité
11/421,67101.06.2006US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) SEMICONDUCTOR DEVICE FABRICATED USING A METAL MICROSTRUCTURE CONTROL PROCESS
(FR) DISPOSITIF SEMICONDUCTEUR RÉALISÉ AU MOYEN D'UN CONTRÔLE DE PROCESSUS DE MICROSTRUCTURE MÉTALLIQUE
Abrégé
(EN)
The invention provides a method for manufacturing a semiconductor device ( 200) that comprises placing a metallic gate layer ( 210) over a gate dielectric layer ( 205) where the metallic gate layer has a crystallographic orientation, and re-orienting the crystallographic orientation of the metallic gate layer by subjecting the metallic gate layer to a hydrogen anneal ( 215).
(FR)
L'invention concerne une méthode de fabrication d'une dispositif semiconducteur ( 200) qui comprend le fait de placer une couche métallique de grille ( 210) par-dessus une couche diélectrique de grille ( 205) laquelle couche de grille métallique présente une orientation cristallographique, et la réorientation de l'orientation cristallographique de la couche métallique de grille en soumettant la couche métallique de grille à un recuit sous hydrogène ( 215).
Dernières données bibliographiques dont dispose le Bureau international