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Paramétrages

1. WO2007137588 - PROCÉDÉ DE FABRICATION D'UN LASER A CAVITÉ VERTICALE ET À ÉMISSION PAR LA SURFACE À CRISTAL PHOTONIQUE OU À BANDE INTERDITE PHOTONIQUE

Numéro de publication WO/2007/137588
Date de publication 06.12.2007
N° de la demande internationale PCT/DK2007/050061
Date du dépôt international 29.05.2007
CIB
H01S 5/183 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
SDISPOSITIFS UTILISANT LE PROCÉDÉ D'AMPLIFICATION DE LA LUMIÈRE PAR ÉMISSION STIMULÉE DE RAYONNEMENT POUR AMPLIFIER OU GÉNÉRER DE LA LUMIÈRE; DISPOSITIFS UTILISANT L’ÉMISSION STIMULÉE DE RAYONNEMENT ÉLECTROMAGNÉTIQUE DANS DES GAMMES D’ONDES AUTRES QU'OPTIQUES
5Lasers à semi-conducteurs
10Structure ou forme du résonateur optique
18Lasers à émission de surface
183ayant une cavité verticale
CPC
H01S 2301/166
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2301Functional characteristics
16Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
166Single transverse or lateral mode
H01S 5/105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
105Comprising a photonic bandgap structure
H01S 5/18311
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
18308having a special structure for lateral current or light confinement
18311using selective oxidation
H01S 5/18319
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
18308having a special structure for lateral current or light confinement
18319comprising a periodical structure in lateral directions
H01S 5/18341
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
18341Intra-cavity contacts
H01S 5/18369
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
18361Structure of the reflectors, e.g. hybrid mirrors
18369based on dielectric materials
Déposants
  • ALIGHT PHOTONICS APS [DK/DK]; Ryttermarken 15-21 DK-3520 Farum, DK (AllExceptUS)
  • BIRKEDAL, Dan [DK/DK]; DK (UsOnly)
  • BISCHOFF, Svend [DK/DK]; DK (UsOnly)
  • JUHL, Michael [DK/DK]; DK (UsOnly)
  • MADSEN, Magnus Hald [DK/DK]; DK (UsOnly)
  • ROMSTAD, Francis Pascal [DK/DK]; DK (UsOnly)
Inventeurs
  • BIRKEDAL, Dan; DK
  • BISCHOFF, Svend; DK
  • JUHL, Michael; DK
  • MADSEN, Magnus Hald; DK
  • ROMSTAD, Francis Pascal; DK
Mandataires
  • PLOUGMANN & VINGTOFT A/S; Sundkrogsgade 9 DK-2100 Copenhagen Ø, DK
Données relatives à la priorité
PA 2006 0072829.05.2006DK
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) A METHOD FOR FABRICATING A PHOTONIC CRYSTAL OR PHOTONIC BANDGAP VERTICAL-CAVITY SURFACE-EMITTING LASER
(FR) PROCÉDÉ DE FABRICATION D'UN LASER A CAVITÉ VERTICALE ET À ÉMISSION PAR LA SURFACE À CRISTAL PHOTONIQUE OU À BANDE INTERDITE PHOTONIQUE
Abrégé
(EN)
The invention relates to fabrication of VCSELs. It provides a method for fabricating a VCSEL that contains a micro/nano-structured mode selective lateral layer, where the micro/nano-structured layer is obtained by well controlled local etching. The invention enables control of the micro/nano-structured layer thickness with very high precision. In particular, the invention relates to a method for fabricating a VCSEL with a micro/nano- structured mode selective layer for controlling the VCSELs transverse electromagnetic modes.
(FR)
L'invention concerne la fabrication de VCSEL. L'invention concerne un procédé de fabrication d'un VCSEL comprenant une couche latérale micro/nano-structurée à sélection de mode, ladite couche micro/nano-structurée étant obtenue par gravure locale contrôlée. L'invention permet de régler l'épaisseur de la couche micro/nano-structurée avec haute précision. L'invention concerne en particulier un procédé de fabrication d'un VCSEL comprenant une couche micro/nano-structurée à sélection de mode permettant de régler les modes électromagnétiques transverses des VCSEL.
Également publié en tant que
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