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1. WO2007100642 - BOITIER SANS PLOMB AVEC DIFFUSEUR DE CHALEUR

Numéro de publication WO/2007/100642
Date de publication 07.09.2007
N° de la demande internationale PCT/US2007/004691
Date du dépôt international 20.02.2007
CIB
H01L 23/34 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
23Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
34Dispositions pour le refroidissement, le chauffage, la ventilation ou la compensation de la température
CPC
H01L 21/561
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
561Batch processing
H01L 21/568
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
568Temporary substrate used as encapsulation process aid
H01L 2224/05553
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
0555Shape
05552in top view
05553being rectangular
H01L 2224/16245
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
15Structure, shape, material or disposition of the bump connectors after the connecting process
16of an individual bump connector
161Disposition
16151the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
16221the body and the item being stacked
16245the item being metallic
H01L 2224/29144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
28Structure, shape, material or disposition of the layer connectors prior to the connecting process
29of an individual layer connector
29001Core members of the layer connector
29099Material
291with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
29138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
29144Gold [Au] as principal constituent
H01L 2224/32245
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32245the item being metallic
Déposants
  • ADVANCED INTERCONNECT TECHNOLOGIES LIMITED [MU]/[MU] (AllExceptUS)
  • ADVANCED INTERCONNECT TECHNOLOGIES, INC. [US]/[US] (AllExceptUS)
Inventeurs
  • RAMOS, Mary Jean Bajacan
  • SAN ANTONIO, Romarico Santos
  • SUBAGIO, Anang
Mandataires
  • GANGEMI, Anthony, P.
Données relatives à la priorité
11/670,65002.02.2007US
60/777,31628.02.2006US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) NO LEAD PACKAGE WITH HEAT SPREADER
(FR) BOITIER SANS PLOMB AVEC DIFFUSEUR DE CHALEUR
Abrégé
(EN)
A no-lead electronic package (70) including a heat spreader (88) and method of manufacturing the same. This method includes the steps of selecting a matrix or mapped no-lead lead frame with die receiving area and leads (74) for interconnect; positioning an integrated circuit device (80) within the central aperture and electrically interconnecting the integrated circuit device (80) to the leads (74); positioning a heat spreader (88) in non-contact proximity to the integrated circuit device (80) such that the integrated circuit device (80) is disposed between the leads (74) and the heat spreader (88); and encapsulating the integrated circuit device (80) and at least a portion of the heat spreader (88) and leads (74) in a molding resin (91).
(FR)
L'invention concerne un boîtier électronique (70) sans plomb comprenant un diffuseur (88) de chaleur, ainsi qu'un procédé pour sa fabrication. Ledit procédé comprend les étapes consistant à sélectionner un support de connexion cartographique ou en matrice sans plomb doté de plages réceptrices pour composants et de connecteurs (74) d'interconnexion ; à positionner un dispositif (80) à circuit intégré dans l'ouverture centrale et à interconnecter électriquement le dispositif (80) à circuit intégré aux connecteurs (74) ; à positionner un diffuseur (88) de chaleur à proximité sans contact du dispositif (80) à circuit intégré de telle sorte que le dispositif (80) à circuit intégré soit disposé entre les connecteurs (74) et le diffuseur (88) de chaleur ; et à enrober le dispositif (80) à circuit intégré et au moins une partie du diffuseur (88) de chaleur et des connecteurs (74) dans une résine (91) de moulage.
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