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1. WO2006104918 - PROCEDE DE FORMATION D'UNE DIODE PLANE AU MOYEN D'UN MASQUE

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

[ EN ]

WHAT IS CLAIMED IS:

1. A diode comprising:
(a) a substrate of a first conductivity type and a doped region of a second conductivity type defining a P/N junction therebetween;
(b) nickel plating on the underside of the substrate and along a central portion of a top side of the substrate overlying the doped region of the second conductivity type;
(c) an oxide coating on the peripheral portion of the top side of the substrate adjacent the central portion; and
(d) a coating of a passivating material along the oxide on the top side of the substrate, the passivating material extending partially over the P/N junction.

2. The diode of claim 1, wherein said first conductivity type has N-type conductivity and said second conductivity type has P-type conductivity.

3. The diode of claim 1, wherein said doped region is doped with boron.

4. The diode of claim 1, wherein the passivating material is polyimide.

5. A diode comprising:
(a) a substrate of a first conductivity type and a doped region of a second conductivity type;
(b) metal plating on the underside of the substrate and along a central portion of the top side of the substrate which corresponds to the doped region of the second conductivity type; and
(c) a coating of a passivating material on top of the oxide on the top side of the substrate, the passivating material extending partially over the doped region.

6. The diode of claim 5, wherein said first conductivity type is N-type conductivity and said second conductivity type is P-type conductivity.

7. The diode of claim 5, wherein said doped region is doped with boron.

8. The diode of claim 5, wherein the passivating material is polyimide.

9. A method of forming a planar diode comprising:
providing a substrate of a first conductivity type;
depositing a layer of oxide over the substrate;
using a mask to expose the central portion of the oxide layer for etching;
removing the central portion of the oxide via etching;
diffusing dopants into the substrate via window diffusion to form a region having a second conductivity type;
plating a metal onto the window and on the opposite side of the substrate; and coating the remaining oxide and a portion of the plating on a side of the substrate with a passivating agent.

10. The method of claim 9, wherein the passivating agent is polyimide.

11. The method of claim 9, wherein said first conductivity type has N-type conductivity and said second conductivity type has P-type conductivity

12. The method of claim 9, wherein the metal comprises nickel.

13. A method of forming a planar diode comprising:
providing a substrate of a first conductivity type;
depositing a layer of oxide over the substrate;
using a mask to expose a selected portion of the oxide layer for etching;
diffusing dopants into the substrate via window diffusion;
plating nickel onto the window and on the opposite side of the substrate;
removing the oxide; and
coating a portion of the substrate and a portion of the plating on a side of the substrate with a passivating agent.

14. The method of claim 13, wherein the passivating agent is polyimide.

15. The method of claim 13, wherein said first conductivity type is N-type conductivity and the doping provides a second conductivity type that is of the is P-type conductivity