Traitement en cours

Veuillez attendre...

Paramétrages

Paramétrages

1. WO2005069390 - DISPOSITIFS THERMOELECTRIQUES

Note: Texte fondé sur des processus automatiques de reconnaissance optique de caractères. Seule la version PDF a une valeur juridique

CLAI S

1. A thermoelectric structure comprising:
a first electrode;
a first thermoelement, the first thermoelement having a first conductivity type and being coupled to the first electrode; and
a first phonon conduction impeding medium, the first phonon conduction impeding medium being
coupled to the first thermoelement, the phonon conduction impeding medium being
thermally insulated from the first electrode.

2. The thermoelectric structure in accordance with claim 1, wherein the phonon conduction impeding medium is directly coupled to the thermoelement.

3. The thermoelectric structure in accordance with claim 1 or 2 wherein the first thermoelement has a thickness less than a thermalization length associated with the first thermoelement.

4. The thermoelectric structure in accordance with claim 1, 2, or 3 wherein the phonon conduction impeding medium is not thermally coupled to the thermoelement.

5. The thermoelectric structure in accordance with claim 1, 2, 3, or 4 wherein the first phonon conduction impeding medium is a liquid metal.

6. The thermoelectric structure in accordance with claim 1, 2, 3, 4, or 5 wherein the first phonon conduction impeding medium comprises at least one of gallium, indium, gallium-indium, lead, lead-indium, cesium doped gallium-indium, gallium-indium-copper, gallium-indium-tin and mercury.

7. The thermoelectric structure in accordance with claim 1, 2, 3, 4, 5, or 6 wherein the first thermoelement comprises at least one of p-type Bio.5Sb1.5Te3, n-type Bi2Te2.8Se0,2, p-type Bi-Sb-Te, n-type Bi-Te compounds, superlattices of Bi2Te3 and Sb2Te3, bismuth chalcogenides, lead chalcogenides, complex chalcogenide compounds including Zn, Bi, Tl, In, Ge, Hf, K, or Cs, SiGe compounds, BiSb compounds, and skutteridites compounds including Co, Sb, Ni, or Fe.

8. The thermoelectric structure in accordance with claim 1, 2, 3, 4, 5, 6, or 7, further comprising:
a first substrate, the first substrate being electrically isolated from and thermally coupled to the first electrode.

9. The thermoelectric structure in accordance with claim 1, 2, 3, 4, 5, 6, 7, or 8 further comprising: a second electrode, the second electrode being coupled to the first phonon conduction impeding
medium.

10. The thermoelectric structure in accordance with claim 9 further comprising:
a second substrate, the second substrate being electrically isolated from and thermally coupled to the second electrode.

11. The thermoelectric structure in accordance with claim 9 or 10 further comprising:
a dielectric material, the dielectric material maintaining spacing between the first electrode and the
second electrode.

12. The thermoelectric structure in accordance with claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, or 11 wherein the first electrode comprises:
a first conductive layer coupled to the first thermoelement; and
a second conductive layer between the first conductive layer and the first thermoelement, the second conductive layer for reducing electromigration at high current densities between the first
conductive layer and the first thermoelement.

13. The thermoelectric structure in accordance with claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, or 12 further comprising:
a second thermoelement, the second thermoelement having a conductivity type opposite to the first conductivity type and being coupled to the first electrode; and
a second phonon conduction impeding medium, the second phonon conduction impeding medium
being coupled to the second thermoelement and being thermally insulated from the first
electrode.

14, The thermoelectric stmcture in accordance with claim 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, or 12 further comprising:
a second thermoelement, the second thermoelement having a conductivity type opposite to the first conductivity type; and
a second phonon conduction impeding medium, the second phonon conduction impeding medium
being coupled to the second thermoelement and the first electrode.

15. A method for fabricating a thermoelectric device, the method comprising:
disposing a first electrode above a first substrate, the first substrate being electrically isolated from
and thermally coupled to the first electrode;
disposing a first thermoelement above the first electrode, the first thermoelement having a first
conductivity type and being thermally coupled to the first electrode; and
disposing a first phonon conduction impeding medium above the first electrode, the first phonon
conduction impeding medium being coupled to the first thermoelement and being thermally insulated from the first electrode.

16. The method for fabricating a thermoelectric device in accordance with claim 15, wherein the phonon conduction impeding medium is directly coupled to the thermoelement.

17. The method for fabricating a thermoelectric device in accordance with claim 15 or 16 wherein the first thermoelement has a thickness less than a thermalization length associated with the first thermoelement.

18. The method for fabricating a thennoelectric device in accordance with claim 15, 16, or 17 wherein the phonon conduction impeding medium is not thermally coupled to the thermoelement.

19. The method for fabricating a thermoelectric device in accordance with claim 15, 16, 17, or 18 wherein the phonon conduction impeding medium is a liquid metal.

20. The method for fabricating a thermoelectric device in accordance with claim 15, 16, 17, 18, or

19, wherein the first phonon conduction impeding medium comprises at least one of gallium, indium, gallium-indium, lead, lead-indium, cesium doped gallium-indium, gallium-indium-copper, gallium-indium-tin and mercury.

21. The method for fabricating a thermoelectric device in accordance with claim 15, 16, 17, 18, 19, or 20, further comprising:
disposing a second electrode above the phonon conduction impeding medium, the second electrode being coupled to the first phonon conduction impeding medium.

22. The method for fabricating a thermoelectric device in accordance with claim 21 further comprising:
disposing a second substrate above the second electrode, the second substrate being electrically
isolated from and thermally coupled to the second electrode.

23. The method for fabricating a thermoelectric device in accordance with claim 21 or 22, further comprising:
disposing a dielectric material between the first electrode and the second electrode in at least one
region other than regions occupied by the first phonon conduction impeding medium and the first thermoelement.

24. The method for fabricating a thermoelectric device in accordance with claim 15, 16, 17, 18, 19,

20, 21, 22, or 23, further comprising:
disposing a second thermoelement above the first electrode, the second thermoelement having a
conductivity type opposite to the first conductivity type and being coupled to the first
electrode; and disposing a second phonon conduction impeding medium above the second thermoelement, the
second phonon conduction impeding medium being coupled to the second thermoelement
and being thermally insulated from the first electrode.

25. The method for fabricating a thermoelectric device in accordance with claim 15, 16, 17, 18, 19, 20, 21, 22, or 23, further comprising:
disposing a second phonon conduction impeding medium above the first electrode, the second
phonon conduction impeding medium being coupled to the first electrode; and
disposing a second thermoelement above the second phonon conduction impeding medium, the
second thermoelement having a conductivity type opposite to the first conductivity type.

26. The method for fabricating a thermoelectric device in accordance with claim 21, 22, 23, 24, or

25, further comprising:
disposing a second substrate above the first electrode, the second substrate being electrically isolated from and thermally coupled to the second electrode.

27. The method for fabricating a thermoelectric device in accordance with claim 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, or 26 wherein disposing a first electrode above a first substrate comprises:
disposing an insulating layer on a surface of a substrate; and
disposing a first conductor above the insulating layer.

28. The method for fabricating a thermoelectric device in accordance with claim 27 wherein the forming a first conductor further comprises:
disposing at least one pit in the insulating layer;
disposing a first conducting material in the pit; and
disposing additional conducting material onto the first conducting material.

29. The method for fabricating a thermoelectric device in accordance with claim 27 or 28 wherein the forming an electrode further comprises:
disposing a second conductor above the first conductor, the second conductor reducing
electromigration at high current densities between the first conductor and the first
thermoelement.

30. The method for fabricating a thennoelectric device in accordance with claim 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, or 29 wherein the first thermoelement comprises at least one of p-type Bio.5Sb1.5Te3, n-type Bi2Te2.8Seo.2, p-type Bi-Sb-Te, n-type Bi-Te compounds, superlattices of Bi2Te3 and

Sb2Te3, bismuth chalcogenides, lead chalcogenides, complex chalcogenide compounds including Zn, Bi, Tl, In, Ge, Hf, K, or Cs, SiGe compounds, BiSb compounds, and skutteridites compounds including Co, Sb, Ni, or Fe.