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1. WO2005006738 - IMAGERIE A SEMI-CONDUCTEUR COMPLEMENTAIRE A L'OXYDE DE METAL POUR LA COMMANDE D'EXPOSITION AUTOMATIQUE ET L'ECHANTILLONNAGE DOUBLE CORRELE

Numéro de publication WO/2005/006738
Date de publication 20.01.2005
N° de la demande internationale PCT/US2004/020930
Date du dépôt international 30.06.2004
CIB
H04N 3/15 2006.01
HÉLECTRICITÉ
04TECHNIQUE DE LA COMMUNICATION ÉLECTRIQUE
NTRANSMISSION D'IMAGES, p.ex. TÉLÉVISION
3Détails des dispositifs de balayage des systèmes de télévision; Leur combinaison avec la production des tensions d'alimentation
10par des moyens non exclusivement optiques-mécaniques
14au moyen de dispositifs à semi-conducteurs à balayage électronique
15pour la production des signaux d'image
CPC
H01L 27/1462
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
H01L 27/14627
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
14627Microlenses
H01L 27/14806
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
148Charge coupled imagers
14806Structural or functional details thereof
H01L 27/14887
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
148Charge coupled imagers
14887Blooming suppression
H04N 5/3535
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
351Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
353Control of the integration time
3535with different integration times within the sensor
H04N 5/37457
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
37457comprising amplifiers shared between a plurality of pixels, e.g. at least one part of the amplifier has to be on the sensor array itself
Déposants
  • MICRON TECHNOLOGY, INC. [US/US]; 8000 South Federal Way Boise, Idaho 83707-0006, US (AllExceptUS)
  • RHODES, Howard, E. [US/US]; US (UsOnly)
Inventeurs
  • RHODES, Howard, E.; US
Mandataires
  • D'AMICO, Thomas, J.; Dickstein Shapiro Morin & Oshinsky LLP 2101 L Street NW Washington, WA 20037-1526, US
Données relatives à la priorité
10/689,63502.10.2003US
60/483,90602.07.2003US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) CMOS IMAGING FOR AUTOMATIC EXPOSURE CONTROL AND CORRELATED DOUBLE SAMPLING
(FR) IMAGERIE A SEMI-CONDUCTEUR COMPLEMENTAIRE A L'OXYDE DE METAL POUR LA COMMANDE D'EXPOSITION AUTOMATIQUE ET L'ECHANTILLONNAGE DOUBLE CORRELE
Abrégé
(EN)
Embodiments of the invention provide pixel cells that allow both automatic light control and correlated double sampling operations. The pixel cell includes first and second photo -conversion devices that can be separately read out. For example, the second photo -conversion device can be the pixel cells' floating diffusion region, with an area and doping profile suitable for photo -conversion. An image sensor may include an array of pixel cells, some or all of which have two photo -conversion devices, and peripheral circuitry for reading out signals from the pixel cells. The image sensor's readout circuitry may monitor charge generated by the second photoconversion devices to determine when to read out signals from the first photoconversion devices.
(FR)
Dans certains modes de la réalisation, la présente invention a trait à des cellules de pixels permettant des opérations de commande automatiques de lumière et d'échantillonnage double corrélé. La cellule de pixels comporte des premier et deuxième dispositifs de photoconversion qui peuvent être lus séparément. Par exemple, le deuxième dispositif de photoconversion peut être une zone de diffusion flottante des cellules de pixels, avec une superficie et un profil de dopage appropriés pour la photoconversion. Un capteur d'images peut comporter un réseau de cellules de pixels, dont certaines ou toutes présentent deux dispositifs de photoconversion, et des circuits périphériques pour la lecture de signaux en provenance des cellules de pixels. Les circuits de lecture du capteur d'images peuvent contrôler la charge générée par les deuxièmes dispositifs de photoconversion pour la détermination de l'instant de lecture des signaux en provenance des premiers dispositifs de photoconversion.
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