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1. WO2005006461 - TRANSISTOR ORGANIQUE A EFFET DE CHAMP

Numéro de publication WO/2005/006461
Date de publication 20.01.2005
N° de la demande internationale PCT/JP2004/009789
Date du dépôt international 02.07.2004
CIB
H01L 51/30 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
51Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives
05spécialement adaptés au redressement, à l'amplification, à la génération d'oscillations ou à la commutation et ayant au moins une barrière de potentiel ou une barrière de surface; Condensateurs ou résistances à l'état solide, ayant au moins une barrière de potentiel ou une barrière de surface
30Emploi de matériaux spécifiés
CPC
H01L 51/0036
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0034Organic polymers or oligomers
0035comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline
0036Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
H01L 51/0037
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0034Organic polymers or oligomers
0035comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline
0036Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
0037Polyethylene dioxythiophene [PEDOT] and derivatives
H01L 51/0052
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
005Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
0052Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
H01L 51/0078
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0077Coordination compounds, e.g. porphyrin
0078Phthalocyanine
H01L 51/0516
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
0512insulated gate field effect transistors
0516characterised by the gate dielectric
H01L 51/0545
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
0512insulated gate field effect transistors
0545Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
Déposants
  • CANON KABUSHIKI KAISHA [JP/JP]; 3-30-2, Shimomaruko Ohta-ku, Tokyo 1468501, JP (AllExceptUS)
  • NAKAMURA, Shinichi [JP/JP]; JP (UsOnly)
Inventeurs
  • NAKAMURA, Shinichi; JP
Mandataires
  • OKABE, Masao ; No. 602, Fuji Bldg. 2-3, Marunouchi 3-chome Chiyoda-ku, Tokyo 1000005, JP
Données relatives à la priorité
2003-19633614.07.2003JP
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) FIELD EFFECT ORGANIC TRANSISTOR
(FR) TRANSISTOR ORGANIQUE A EFFET DE CHAMP
Abrégé
(EN)
A field effect organic transistor includes a source electrode, a drain electrode, a gate electrode, a gate insulating layer and an organic semiconductive layer; in the field effect organic transistor, the organic semiconductive layer includes a first organic semiconductive layer forming a channel region and a second organic semiconductive layer arranged to abut the first organic semiconductive layer; the charge mobility (μ1) in the first organic semiconductive layer is 10-3 cm2/Vs or more; the charge mobility (μ2) in the second organic semiconductive layer is 10-4 cm2/Vs or less; and the ratio (μ1/&μ2) between the two organic semiconductive layers is 10 or more.
(FR)
La présente invention concerne un transistor organique à effet de champ qui comprend une électrode source, une électrode drain, une électrode grille, une couche isolante grille et une couche semiconductrice organique. Dans ce transistor organique à effet de champ, la couche semiconductrice organique comprend une première couche semiconductrice organique formant une région canal et une seconde couche semiconductrice organique agencée pour venir toucher la première couche semiconductrice organique. La mobilité de charges(µ1) dans la première couche semiconductrice organique est de 10-3 cm2/Vs, voire plus. La mobilité de charge (µ2) dans la seconde couche semiconductrice organique est de 10-4 cm2/Vs au maximum et, le rapport(µ1/&µ2) entre les deux couches semiconductrices organiques est de 10, voire plus.
Également publié en tant que
US2007034860
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