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1. WO2005006400 - SUPPORT DE SUBSTRAT EQUIPE D'UN MECANISME DE REGULATION DE LA TEMPERATURE DYNAMIQUE

Numéro de publication WO/2005/006400
Date de publication 20.01.2005
N° de la demande internationale PCT/US2004/020749
Date du dépôt international 28.06.2004
CIB
C23C 16/00 2006.01
CCHIMIE; MÉTALLURGIE
23REVÊTEMENT DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT DE MATÉRIAUX AVEC DES MATÉRIAUX MÉTALLIQUES; TRAITEMENT CHIMIQUE DE SURFACE; TRAITEMENT DE DIFFUSION DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT PAR ÉVAPORATION SOUS VIDE, PAR PULVÉRISATION CATHODIQUE, PAR IMPLANTATION D'IONS OU PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR, EN GÉNÉRAL; MOYENS POUR EMPÊCHER LA CORROSION DES MATÉRIAUX MÉTALLIQUES, L'ENTARTRAGE OU LES INCRUSTATIONS, EN GÉNÉRAL
CREVÊTEMENT DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT DE MATÉRIAUX AVEC DES MATÉRIAUX MÉTALLIQUES; TRAITEMENT DE SURFACE DE MATÉRIAUX MÉTALLIQUES PAR DIFFUSION DANS LA SURFACE, PAR CONVERSION CHIMIQUE OU SUBSTITUTION; REVÊTEMENT PAR ÉVAPORATION SOUS VIDE, PAR PULVÉRISATION CATHODIQUE, PAR IMPLANTATION D'IONS OU PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR, EN GÉNÉRAL
16Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD)
CPC
C23C 16/4586
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4582Rigid and flat substrates, e.g. plates or discs
4583the substrate being supported substantially horizontally
4586Elements in the interior of the support, e.g. electrodes, heating or cooling devices
C23C 16/466
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
463Cooling of the substrate
466using thermal contact gas
F27D 5/0037
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
27FURNACES; KILNS; OVENS; RETORTS
DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
5Supports, screens, or the like for the charge within the furnace
0037Supports specially adapted for semi-conductors
H01J 2237/2001
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
2001Maintaining constant desired temperature
H01J 37/321
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
321the radio frequency energy being inductively coupled to the plasma
H01L 21/67109
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67109mainly by convection
Déposants
  • LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway Fremont, CA 94538, US (AllExceptUS)
  • STEGER, Robert, J. [US/US]; US (UsOnly)
Inventeurs
  • STEGER, Robert, J.; US
Mandataires
  • PETERSON, James, W.; Burns, Doane, Swecker & Mathis, LLP P.O. Box 1404 Alexandria, VA 22313-1404, US
Données relatives à la priorité
10/608,09130.06.2003US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) SUBSTRATE SUPPORT HAVING DYNAMIC TEMPERATURE CONTROL
(FR) SUPPORT DE SUBSTRAT EQUIPE D'UN MECANISME DE REGULATION DE LA TEMPERATURE DYNAMIQUE
Abrégé
(EN)
A substrate support (40) useful for a plasma processing apparatus includes a metallic heat transfer member (48) and an overlying electrostatic chuck (50) having a substrate (70) support surface. The heat transfer member (48) includes one or more passage through which a liquid is circulated to heat and/or cool the heat transfer member. The heat transfer member has a low thermal mass and can be rapidly heated and/or cooled to a desired temperature by the liquid, so as to rapidly change the substrate (70) temperature during plasma processing.
(FR)
L'invention concerne un support de substrat destiné à un appareil de traitement au plasma, comprenant un élément de transfert de chaleur métallique et un mandrin électrostatique sus-jacent comportant une surface de support de substrat. L'élément de transfert de chaleur comprend un ou plusieurs passages à travers lesquels un liquide est mis en circulation pour chauffer et/ou refroidir l'élément de transfert de chaleur. L'élément de transfert de chaleur possède une faible masse thermique et peut être rapidement chauffé et/ou refroidi à une température désirée par le liquide, ce qui permet de modifier rapidement la température du substrat lors d'un traitement au plasma.
Dernières données bibliographiques dont dispose le Bureau international