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1. WO2005006393 - FILMS ISOLANTS NON POREUX SANS PIQURES SUR SUBSTRATS METALLIQUES SOUPLES POUR APPLICATIONS A FILMS MINCES

Numéro de publication WO/2005/006393
Date de publication 20.01.2005
N° de la demande internationale PCT/US2004/016961
Date du dépôt international 27.05.2004
CIB
H01L 31/00 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
31Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
CPC
H01L 31/03928
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0392including thin films deposited on metallic or insulating substrates ; ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
03926comprising a flexible substrate
03928including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
H01L 31/0445
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
0445including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
H01L 31/0687
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
0687Multiple junction or tandem solar cells
H01L 31/0749
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0749including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
H01L 31/078
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
078including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
Y02E 10/541
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
54Material technologies
541CuInSe2 material PV cells
Déposants
  • TRITON SYSTEMS, INC. [US/US]; 200 Turnpike Road Chelmsford, 01824, US (AllExceptUS)
  • MUKHERJEE, Somesh [IN/US]; US (UsOnly)
  • MARTIN, Ronald [US/US]; US (UsOnly)
  • KURCHINSKI, Frank [US/US]; US (UsOnly)
Inventeurs
  • MUKHERJEE, Somesh; US
  • MARTIN, Ronald; US
  • KURCHINSKI, Frank; US
Mandataires
  • MILLER, Raymond, A.; Pepper Hamilton LLP One Mellon Center, 50th Floor 500 Grant Street Pittsburgh, PA 15219, US
Données relatives à la priorité
60/473,51427.05.2003US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) PINHOLD POROSITY FREE INSULATING FILMS ON FLEXIBLE METALLIC SUBSTRATES FOR THIN FILM APPLICATIONS
(FR) FILMS ISOLANTS NON POREUX SANS PIQURES SUR SUBSTRATS METALLIQUES SOUPLES POUR APPLICATIONS A FILMS MINCES
Abrégé
(EN)
Monolithically integrated solar cells produced at high temperatures on high temperature metal substrates (100) are disclosed. The coatings are thin-film and the insulating layer (110) is pinhole and porosity-free. The methods and devices disclosed enable cost-effective, high performing monolithically integrated photovoltaic modules using Copper Indium Gallium di-Selenide (CIGS) films to be made on the dielectric coated metallic substrates (100). Embodiments of the invention include deposition methods as well as selection of particular insulating materials for deposition on a thermally stable substrate (100) based on the coating's band gap energy, dielectric constant, and coefficient of thermal expansion (CTE). Tandem CIGS solar cells monolithically integrated on flexible substrates (100) may also be produced by the methods and materials disclosed. The tandem solar cell devices include an upper solar cell, a lower solar cell, and an intermediate buffer layer with a tunnel junction.
(FR)
L'invention concerne des cellules solaires à intégration monolithique produites à des températures élevées sur des substrats métalliques haute température. Les revêtements sont un film mince et la couche isolante est dépourvue de piqûres et non poreuse. Les procédés et les dispositifs de l'invention permettent de fabriquer des modules photovoltaïques à intégration monolithique haute performance de faible coût faisant appel à des films de cuivre-indium-gallium-disélénide (CIGS) sur les substrats métalliques revêtus diélectriques. Des modes de réalisation de l'invention comprennent des procédés de dépôt ainsi que la sélection de matériaux isolants particuliers en vue d'un dépôt sur un substrat thermiquement stable sur la base de l'énergie de bande interdite, de la constante diélectrique et du coefficient de dilatation thermique (CTE) du revêtement. Des cellules solaires CIGS en tandem intégrées de manière monolithique sur des substrats souples peuvent également être produites au moyen des procédés et des matériaux susmentionnés. Ces dispositifs à cellules solaires en tandem comprennent une cellule solaire supérieure, une cellule solaire inférieure et une couche tampon intermédiaire présentant une jonction à effet tunnel. L'énergie de bande interdite élevée est absorbée par la cellule solaire supérieure, et l'énergie de bande interdite plus faible traverse la cellule solaire supérieure et est absorbée par la cellule solaire inférieure.
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