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1. WO2005006339 - CELLULE DE MEMOIRE EEPROM FLASH A ECHELLE VARIABLE A GRILLE FLOTTANTE A ENCOCHES ET REGION SOURCE ETAGEE ET PROCEDE DE FABRICATION CORRESPONDANT

Numéro de publication WO/2005/006339
Date de publication 20.01.2005
N° de la demande internationale PCT/US2004/021149
Date du dépôt international 29.06.2004
CIB
H01L 29/76 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
29Dispositifs à semi-conducteurs spécialement adaptés au redressement, à l'amplification, à la génération d'oscillations ou à la commutation et ayant au moins une barrière de potentiel ou une barrière de surface; Condensateurs ou résistances ayant au moins une barrière de potentiel ou une barrière de surface, p.ex. jonction PN, région d'appauvrissement, ou région de concentration de porteurs de charges; Détails des corps semi-conducteurs ou de leurs électrodes
66Types de dispositifs semi-conducteurs
68commandables par le seul courant électrique fourni ou par la seule tension appliquée, à une électrode qui ne transporte pas le courant à redresser, amplifier ou commuter
76Dispositifs unipolaires
CPC
G11C 16/0458
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
04using variable threshold transistors, e.g. FAMOS
0408comprising cells containing floating gate transistors
0441comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
0458comprising plural independent floating gates which store independent data
H01L 27/115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
H01L 27/11521
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11521characterised by the memory core region
H01L 29/40114
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
401Multistep manufacturing processes
4011for data storage electrodes
40114the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
H01L 29/42328
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42324Gate electrodes for transistors with a floating gate
42328with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
H01L 29/66825
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66825with a floating gate
Déposants
  • INTEGRATED MEMORY TECHNOLOGIES, INC. [US/US]; 2285 Martin Avenue Suite A Santa Clara, CA 95050, US
Inventeurs
  • JENQ, Ching-Shi; US
  • YEN, Ting, P.; US
Mandataires
  • GRAY CARY WARE & FREIDENRICH; Attn.: Limbach, Alan, A. 2000 University Avenue East Palo Alto, CA 94303, US
Données relatives à la priorité
10/878,09928.06.2004US
60/484,88202.07.2003US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) A SCALABLE FLASH EEPROM MEMORY CELL WITH NOTCHED FLOATING GATE AND GRADED SOURCE REGION, AND METHOD OF MANUFACTURING THE SAME
(FR) CELLULE DE MEMOIRE EEPROM FLASH A ECHELLE VARIABLE A GRILLE FLOTTANTE A ENCOCHES ET REGION SOURCE ETAGEE ET PROCEDE DE FABRICATION CORRESPONDANT
Abrégé
(EN)
An memory device, and method of making same, that includes source and drain regions defining a channel region therebetween. A select gate is formed over and insulated from a first portion of the channel region. A conductive floating gate is disposed over and insulated from the source region and a second portion of the channel region. A notch is formed in the floating gate bottom surface having an edge that is either aligned with an edge of the source region or is disposed over the source region. A conductive control gate is disposed adjacent to the floating gate. By having the source region terminate under the thicker insulation region provided by the notch, the breakdown voltage of the source junction is increased. Alternately, the lower portion of the floating gate is formed entirely over the source region, for producing fringing fields to control the adjacent portion of the channel region.
(FR)
Cette invention concerne un dispositif de mémoire et un procédé de fabrication de ce dispositif de mémoire, lequel comprend des régions source et drain définissant entre elles une région de canal. Une grille de sélection est formée sur une première partie de la région de canal et est isolée de celle-ci. Une grille flottante conductrice est disposée sur la région source et une seconde partie de la région de canal et est isolée de celles-ci. Une encoche est formée dans la surface inférieure de la grille flottante comprenant un bord qui est soit aligné avec un bord de la région source, soit disposé sur la région source. Une grille de commande conductrice est disposée à proximité de la grille flottante. La région source s'arrête sous la région d'isolation plus épaisse produite par l'encoche, ce qui permet d'accroître la tension disruptive de la jonction source. Dans une variante, la partie inférieure de la grille flottante est formée entièrement sur la région source, ce qui permet de produire des champs de frange servant à commander la partie adjacente de la région de canal.
Également publié en tant que
JP2006518758
KR1020067000078
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