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1. WO2005001925 - PROCEDE D'UTILISATION D'UN DISPOSITIF DE TRAITEMENT A VIDE

Numéro de publication WO/2005/001925
Date de publication 06.01.2005
N° de la demande internationale PCT/JP2004/009011
Date du dépôt international 25.06.2004
CIB
H01L 21/00 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
CPC
C23C 14/564
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
C23C 16/4408
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
4408by purging residual gases from the reaction chamber or gas lines
C23C 16/54
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
54Apparatus specially adapted for continuous coating
H01L 21/67017
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
H01L 21/67167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67155Apparatus for manufacturing or treating in a plurality of work-stations
67161characterized by the layout of the process chambers
67167surrounding a central transfer chamber
Déposants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP/JP]; 〒1078481 東京都港区赤坂五丁目3番6号 Tokyo 3-6, Akasaka 5-chome, Minato-ku, Tokyo 1078481, JP (AllExceptUS)
  • 原 正道 HARA, Masamichi [JP/JP]; JP (UsOnly)
Inventeurs
  • 原 正道 HARA, Masamichi; JP
Mandataires
  • 吉武 賢次 YOSHITAKE, Kenji; 〒1000005 東京都千代田区丸の内三丁目2番3号 富士ビル323号 協和特許法律事務所 Tokyo Kyowa Patent & Law Office, Room 323, Fuji Bldg., 2-3, Marunouchi 3-chome, Chiyoda-ku Tokyo 1000005, JP
Données relatives à la priorité
2003-18323826.06.2003JP
Langue de publication japonais (JA)
Langue de dépôt japonais (JA)
États désignés
Titre
(EN) VACUUM PROCESSING DEVICE OPERATING METHOD
(FR) PROCEDE D'UTILISATION D'UN DISPOSITIF DE TRAITEMENT A VIDE
(JA) 真空処理装置の操作方法
Abrégé
(EN)
A vacuum processing device operating method for performing a high purification degree of processing for which contamination of atmosphere should be avoided and for performing a medium purification degree of processing for which contamination of atmosphere should be avoided in a less degree than for the high purification degree of processing. The processing device comprises processing chambers (4A, 4B) for performing a high purification degree of processing, processing chambers (4C, 4D) for performing a medium purification degree of processing, and a common transfer chamber (6) provided with a transfer mechanism for transferring a processing subject object. Each chamber (4A-4D, 6) is arranged so that it can be evacuated. Gate valves (G) are installed to allow the common transfer chamber (6) to communicate with or to be shut off from each processing chamber (4A-4D). In this operating method, it is arranged that when communication is to be established between the common transfer chamber (6) and the processing chambers (4A, 4B) for a high degree of purification, just before communication the pressures in the processing chambers (4A, 4B) become slightly higher than the pressure in the common transfer chamber and when communication is to be established between the common transfer chamber (6) and the processing chambers (4C, 4D) for a medium degree of purification, just before communication the pressures in the processing chambers (4C, 4D) become slightly lower than the pressure in the common transfer chamber.
(FR)
L'invention concerne un procédé d'utilisation d'un dispositif de traitement à vide, destiné à obtenir un degré de purification élevé pour un traitement nécessitant une atmosphère exempte de contamination, et un degré de purification moyen pour un traitement nécessitant une atmosphère exempte de contamination à un degré moindre. Le dispositif de traitement comporte des chambres de traitement (4A, 4B) destinées à obtenir un degré de purification élevé pour le traitement, des chambres de traitement (4C, 4D) destinées à obtenir un dégrée de purification moyen pour le traitement, et une chambre de transfert commune (6) pourvue d'un mécanisme de transfert destiné à transférer un objet de traitement. Chaque chambre (4A-4D, 6) est disposée de manière à pouvoir être évacuée. Des clapets (G) sont installés de manière à établir/bloquer la communication entre la chambre de transfert commune (6) et chaque chambre de traitement (4A-4D). Lorsque la communication doit être établie pour un degré de purification élevé, les pressions des chambres de traitement (4A, 4B) deviennent légèrement supérieures à la pression de la chambre de transfert (6) peu avant établissement de la communication, et lorsque la communication doit être établie pour un degré de purification moyen, les pressions des chambres de traitement (4A, 4B) deviennent légèrement inférieures à la pression de la chambre de transfert (6) peu avant établissement de la communication.
(JA)
 雰囲気の汚染を高度に嫌う高清浄度処理と、雰囲気の汚染を高清浄度処理よりは低い中程度に嫌う中清浄度処理とを行うための真空処理装置の操作方法である。処理装置は、高清浄度処理を行うための処理室(4A、4B)と、中清浄度処理を行うための処理室(4C、4D)と、被処理物体を搬送する搬送機構が設けられた共通搬送室(6)とを備えている。各室(4A~4D、6)は、それぞれ真空引き可能に構成されている。共通搬送室(6)が各処理室(4A~4D)に対してそれぞれ連通および遮断可能となるようにゲートバルブ(G)が設けられている。この操作方法においては、共通搬送室(6)と高清浄度処理室(4A、4B)とを連通する際には、連通する直前に、処理室(4A、4B)内の圧力が共通搬送室内の圧力よりも僅かに高くなり、共通搬送室(6)と中清浄度処理室(4C、4D)とを連通する際には、連通する直前に、処理室(4C、4D)内の圧力が共通搬送室内の圧力よりも僅かに低くなっているようにする。
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