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Paramétrages

Paramétrages

1. WO2005001569 - MASQUE D'EXPOSITION, SON PROCEDE DE CONCEPTION ET DE FABRICATION, PROCEDE D'EXPOSITION ET APPAREIL ASSOCIE, PROCEDE DE FORMATION DE MOTIF, ET PROCEDE DE FABRICATION DE DISPOSITIF

Numéro de publication WO/2005/001569
Date de publication 06.01.2005
N° de la demande internationale PCT/JP2004/009375
Date du dépôt international 25.06.2004
CIB
G03F 7/20 2006.01
GPHYSIQUE
03PHOTOGRAPHIE; CINÉMATOGRAPHIE; TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; ÉLECTROGRAPHIE; HOLOGRAPHIE
FPRODUCTION PAR VOIE PHOTOMÉCANIQUE DE SURFACES TEXTURÉES, p.ex. POUR L'IMPRESSION, POUR LE TRAITEMENT DE DISPOSITIFS SEMI-CONDUCTEURS; MATÉRIAUX À CET EFFET; ORIGINAUX À CET EFFET; APPAREILLAGES SPÉCIALEMENT ADAPTÉS À CET EFFET
7Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
20Exposition; Appareillages à cet effet
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
G03F 1/50
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
50Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
G03F 7/2014
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
2002with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
2014Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
G03F 7/70325
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70216Systems for imaging mask onto workpiece
70325Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lens
G03F 7/7035
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70216Systems for imaging mask onto workpiece
7035Proximity or contact printer
G03F 7/70425
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
Déposants
  • CANON KABUSHIKI KAISHA [JP/JP]; 30-2, Shimomaruko 3-chome Ohta-ku, Tokyo 146-8501, JP (AllExceptUS)
  • YAMAGUCHI, Takako [JP/JP]; JP (UsOnly)
  • INAO, Yasuhisa [JP/JP]; JP (UsOnly)
Inventeurs
  • YAMAGUCHI, Takako; JP
  • INAO, Yasuhisa; JP
Mandataires
  • YAMADA, Ryuichi; TOKO International Patent Office Hasegawa Bldg. 4F 7-7, Toranomon 3-chome Minato-ku, Tokyo 105-0001, JP
Données relatives à la priorité
2003-18204126.06.2003JP
2004-09769930.03.2004JP
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) EXPOSURE MASK, METHOD OF DESIGNING AND MANUFACTURING THE SAME, EXPOSURE METHOD AND APPARATUS, PATTERN FORMING METHOD, AND DEVICE MANUFACTURING METHOD
(FR) MASQUE D'EXPOSITION, SON PROCEDE DE CONCEPTION ET DE FABRICATION, PROCEDE D'EXPOSITION ET APPAREIL ASSOCIE, PROCEDE DE FORMATION DE MOTIF, ET PROCEDE DE FABRICATION DE DISPOSITIF
Abrégé
(EN)
This specification discloses an exposure mask, a method of designing and manufacturing an exposure mask, an exposure method and apparatus, a pattern forming method, and a device manufacturing method. Specifically, the exposure mask is adapted to expose an image forming layer provided on a substrate, by use of near field light leaking from adjoining openings formed in a light blocking member, wherein the light blocking film has an opening interval that is determined so that an electric field distribution at the image forming layer side of the opening to be defined as exposure light is projected on the light blocking member has a correlation with an eccentric model of electric field distribution as determined by a linewidth and a height of a pattern to be produced.
(FR)
L'invention concerne un masque d'exposition, un procédé de conception et de fabrication d'un masque d'exposition, un procédé d'exposition et un appareil associé, un procédé de formation de motif et un procédé de fabrication de dispositif. Plus précisément, le masque d'exposition est conçu pour exposer une couche de formation d'image posée sur un substrat, au moyen d'une lumière de champ proche provenant d'ouvertures contiguës formées dans un élément bloquant la lumière. Le film bloquant la lumière a un intervalle d'ouverture déterminé de façon qu'une distribution de champ électrique du côté couche de formation d'image de l'ouverture à définir comme lumière d'exposition se projette sur l'élément bloquant la lumière, qui a une corrélation avec un modèle excentrique de distribution de champ électrique tel que déterminé par une largeur de ligne et une hauteur d'un motif à produire.
Également publié en tant que
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