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1. WO2003025675 - MATERIAU POUR LA FORMATION DE MOTIF, ET PROCEDE RELATIF A LA FORMATION DE MOTIF

Numéro de publication WO/2003/025675
Date de publication 27.03.2003
N° de la demande internationale PCT/JP2002/009380
Date du dépôt international 12.09.2002
CIB
G03F 7/004 2006.01
GPHYSIQUE
03PHOTOGRAPHIE; CINÉMATOGRAPHIE; TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; ÉLECTROGRAPHIE; HOLOGRAPHIE
FPRODUCTION PAR VOIE PHOTOMÉCANIQUE DE SURFACES TEXTURÉES, p.ex. POUR L'IMPRESSION, POUR LE TRAITEMENT DE DISPOSITIFS SEMI-CONDUCTEURS; MATÉRIAUX À CET EFFET; ORIGINAUX À CET EFFET; APPAREILLAGES SPÉCIALEMENT ADAPTÉS À CET EFFET
7Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
004Matériaux photosensibles
G03F 7/039 2006.01
GPHYSIQUE
03PHOTOGRAPHIE; CINÉMATOGRAPHIE; TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; ÉLECTROGRAPHIE; HOLOGRAPHIE
FPRODUCTION PAR VOIE PHOTOMÉCANIQUE DE SURFACES TEXTURÉES, p.ex. POUR L'IMPRESSION, POUR LE TRAITEMENT DE DISPOSITIFS SEMI-CONDUCTEURS; MATÉRIAUX À CET EFFET; ORIGINAUX À CET EFFET; APPAREILLAGES SPÉCIALEMENT ADAPTÉS À CET EFFET
7Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
004Matériaux photosensibles
039Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
CPC
G03F 7/0046
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
0046with perfluoro compounds, e.g. for dry lithography
G03F 7/0395
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
0392the macromolecular compound being present in a chemically amplified positive photoresist composition
0395the macromolecular compound having a backbone with alicyclic moieties
G03F 7/0397
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
0392the macromolecular compound being present in a chemically amplified positive photoresist composition
0397the macromolecular compound having an alicyclic moiety in a side chain
Y10S 430/106
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
430Radiation imagery chemistry: process, composition, or product thereof
1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
1055Radiation sensitive composition or product or process of making
106Binder containing
Y10S 430/108
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
430Radiation imagery chemistry: process, composition, or product thereof
1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
1055Radiation sensitive composition or product or process of making
106Binder containing
108Polyolefin or halogen containing
Y10S 430/111
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
430Radiation imagery chemistry: process, composition, or product thereof
1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
1055Radiation sensitive composition or product or process of making
106Binder containing
111Polymer of unsaturated acid or ester
Déposants
  • MATSUSHITA ELECTRIC INDUSTRIAL CO.,LTD. [JP]/[JP] (AllExceptUS)
  • KISHIMURA, Shinji [JP]/[JP] (UsOnly)
  • ENDO, Masayuki [JP]/[JP] (UsOnly)
  • SASAGO, Masaru [JP]/[JP] (UsOnly)
  • UEDA, Mitsuru [JP]/[JP] (UsOnly)
  • FUJIGAYA, Tsuyohiko [JP]/[JP] (UsOnly)
Inventeurs
  • KISHIMURA, Shinji
  • ENDO, Masayuki
  • SASAGO, Masaru
  • UEDA, Mitsuru
  • FUJIGAYA, Tsuyohiko
Mandataires
  • MAEDA, Hiroshi
Données relatives à la priorité
2001/27759413.09.2001JP
Langue de publication japonais (JA)
Langue de dépôt japonais (JA)
États désignés
Titre
(EN) PATTERN FORMING MATERIAL AND METHOD OF PATTERN FORMATION
(FR) MATERIAU POUR LA FORMATION DE MOTIF, ET PROCEDE RELATIF A LA FORMATION DE MOTIF
Abrégé
(EN)
A pattern forming material comprising a base resin containing units represented by the general formula (1) and units represented by the general formula (2) and an acid generator: (1) (2) wherein R1 and R3 may be the same or different and are each hydrogen, chloro, fluoro, alkyl, or fluorinated alkyl; R2 is selected from among hydrogen, alkyl, alicyclic groups, aromatic groups, heterocyclic groups, ester groups, and ether groups, each of which cannot be eliminated with an acid; R4 is a protective group which can be eliminated with an acid; m is an integer of 0 to 5; and a and b satisfy the relationships: 0 < a < 1, 0 < b < 1, and 0 < a + b ≤ 1.
(FR)
L'invention concerne un matériau pour la formation de motif, qui comprend une résine de base ayant des unités représentées par la formule générale (1), des unités représentées par la formule générale (2), et un générateur d'acide. Dans lesdites formules, R1 et R3 peuvent être identiques ou différents, représentant chacun hydrogène, chloro, fluoro, alkyle ou alkyle fluoré; R2 appartient à l'ensemble constitué par hydrogène, alkyle, groupes alicycliques, groupes aromatiques, groupes hétérocycliques, groupes ester, et groupes éther, sachant qu'aucun d'entre eux ne peut être éliminé par un acide; R4 est un groupe protecteur qui peut être éliminé par un acide; m est un entier valant de 0 à 5; enfin, a et b satisfont les relations suivantes: 0 < a < 1, 0 < b < 1, et 0 < a + b $m(F)1.
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