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1. WO2003003423 - PROCEDE ET APPAREIL A DISPOSITIF OPTIQUE ACTIF A COTE SUPERIEUR

Numéro de publication WO/2003/003423
Date de publication 09.01.2003
N° de la demande internationale PCT/US2002/022051
Date du dépôt international 28.06.2002
Demande présentée en vertu du Chapitre 2 29.01.2003
CIB
H01L 21/00 2006.01
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
CPC
H01L 21/76898
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76898formed through a semiconductor substrate
H01L 2224/45014
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
4501Shape
45012Cross-sectional shape
45014Ribbon connectors, e.g. rectangular cross-section
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H01L 2224/48227
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
48221the body and the item being stacked
48225the item being non-metallic, e.g. insulating substrate with or without metallisation
48227connecting the wire to a bond pad of the item
H01L 2924/00014
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
00014the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
H01L 2924/01322
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
013Alloys
0132Binary Alloys
01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
Déposants
  • XANOPTIX, INC. [US/US]; 10 Al Paul Lane Merrimack, NH 03054, US
Inventeurs
  • FASKA, Tom; US
  • DUDOFF, Greg; US
Mandataires
  • STRAUSSMAN, Richard; Morgan & Finnegan, L.L.P. 345 Park Avenue New York, NY 10154, US
Données relatives à la priorité
09/896,18929.06.2001US
09/896,66529.06.2001US
09/896,98329.06.2001US
09/897,15829.06.2001US
09/897,16029.06.2001US
10/180,38326.06.2002US
60/365,99819.03.2002US
60/366,03219.03.2002US
Langue de publication anglais (EN)
Langue de dépôt anglais (EN)
États désignés
Titre
(EN) TOPSIDE ACTIVE OPTICAL DEVICE APPARATUS AND METHOD
(FR) PROCEDE ET APPAREIL A DISPOSITIF OPTIQUE ACTIF A COTE SUPERIEUR
Abrégé
(EN)
A method of integrating a topside optical device, having electrical contacts on a top side, with an electronic chip (324) having electrical contacts on a connection side, involves creating a trench (308), defined by a wall, from the top side of a wafer containing the topside optical device into a substrate (304) of the wafer, making a portion of the wall conductive by applying a conductive material to the portion; and thinning the substrate to expose the conductive material.
(FR)
L'invention concerne un procédé permettant d'intégrer une puce électronique (324) dotée de contacts électriques sur un côté connexion, dans un dispositif optique à côté supérieur présentant des contacts électriques sur un côté supérieur. Ce procédé consiste à créer une tranchée (308), laquelle est définie par une paroi depuis le côté supérieur d'une tranche contenant le dispositif optique à côté supérieur, dans un substrat (304) de la tranche; à rendre une portion de la paroi conductrice par application d'un matériau conducteur sur la portion; puis à amincir le substrat afin d'exposer le matériau conducteur.
Dernières données bibliographiques dont dispose le Bureau international