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1. WO2001074916 - FLUOROPOLYMERE RENFERMANT UN GROUPE QUI REAGIT AUX ACIDES ET COMPOSITION PHOTORESIST A AMPLIFICATION CHIMIQUE CONTENANT LEDIT FLUOROPOLYMERE

Numéro de publication WO/2001/074916
Date de publication 11.10.2001
N° de la demande internationale PCT/JP2001/002897
Date du dépôt international 03.04.2001
Demande présentée en vertu du Chapitre 2 10.09.2001
CIB
G03F 7/004 2006.01
GPHYSIQUE
03PHOTOGRAPHIE; CINÉMATOGRAPHIE; TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; ÉLECTROGRAPHIE; HOLOGRAPHIE
FPRODUCTION PAR VOIE PHOTOMÉCANIQUE DE SURFACES TEXTURÉES, p.ex. POUR L'IMPRESSION, POUR LE TRAITEMENT DE DISPOSITIFS SEMI-CONDUCTEURS; MATÉRIAUX À CET EFFET; ORIGINAUX À CET EFFET; APPAREILLAGES SPÉCIALEMENT ADAPTÉS À CET EFFET
7Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
004Matériaux photosensibles
G03F 7/039 2006.01
GPHYSIQUE
03PHOTOGRAPHIE; CINÉMATOGRAPHIE; TECHNIQUES ANALOGUES UTILISANT D'AUTRES ONDES QUE DES ONDES OPTIQUES; ÉLECTROGRAPHIE; HOLOGRAPHIE
FPRODUCTION PAR VOIE PHOTOMÉCANIQUE DE SURFACES TEXTURÉES, p.ex. POUR L'IMPRESSION, POUR LE TRAITEMENT DE DISPOSITIFS SEMI-CONDUCTEURS; MATÉRIAUX À CET EFFET; ORIGINAUX À CET EFFET; APPAREILLAGES SPÉCIALEMENT ADAPTÉS À CET EFFET
7Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
004Matériaux photosensibles
039Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
CPC
G03F 7/0045
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
0045with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
G03F 7/0046
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
0046with perfluoro compounds, e.g. for dry lithography
G03F 7/0382
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
038Macromolecular compounds which are rendered insoluble or differentially wettable
0382the macromolecular compound being present in a chemically amplified negative photoresist composition
G03F 7/039
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/0392
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
0392the macromolecular compound being present in a chemically amplified positive photoresist composition
G03F 7/0395
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
0392the macromolecular compound being present in a chemically amplified positive photoresist composition
0395the macromolecular compound having a backbone with alicyclic moieties
Déposants
  • DAIKIN INDUSTRIES, LTD. [JP]/[JP] (AllExceptUS)
  • ARAKI, Takayuki [JP]/[JP] (UsOnly)
  • KOH, Meiten [KR]/[JP] (UsOnly)
  • TANAKA, Yoshito [JP]/[JP] (UsOnly)
  • ISHIKAWA, Takuji [JP]/[JP] (UsOnly)
  • AOYAMA, Hirokazu [JP]/[JP] (UsOnly)
  • SHIMIZU, Tetsuo [JP]/[JP] (UsOnly)
Inventeurs
  • ARAKI, Takayuki
  • KOH, Meiten
  • TANAKA, Yoshito
  • ISHIKAWA, Takuji
  • AOYAMA, Hirokazu
  • SHIMIZU, Tetsuo
Mandataires
  • ASAHINA, Sohta
Données relatives à la priorité
2000-10279904.04.2000JP
2000-17749413.06.2000JP
2001-6189606.03.2001JP
Langue de publication japonais (JA)
Langue de dépôt japonais (JA)
États désignés
Titre
(EN) NOVEL FLUOROPOLYMER HAVING ACID-REACTIVE GROUP AND CHEMICAL AMPLIFICATION TYPE PHOTORESIST COMPOSITION CONTAINING THE SAME
(FR) FLUOROPOLYMERE RENFERMANT UN GROUPE QUI REAGIT AUX ACIDES ET COMPOSITION PHOTORESIST A AMPLIFICATION CHIMIQUE CONTENANT LEDIT FLUOROPOLYMERE
Abrégé
(EN)
A novel fluoropolymer having acid-reactive groups which highly transmits energy rays (radiation) in the vacuum ultraviolet region (157 nm); and a fluoropolymer base material which contains the fluoropolymer and is suitable for use in a photoresist. The fluoropolymer has a segment represented by the formula -(M1)-(M2)-(A)- (wherein M1 is a structural unit having a functional group which is eliminated or decomposed with an acid; M2 is a structural unit derived from a fluoroacrylate; and A is a structural unit derived from other copolymerizable monomer), comprises 1 to 99 mol% the structural unit (M1), 1 to 99 mol% the structural unit (M2), and 0 to 98 mol% the structural unit (A1), provided that (M1)/(M2) is from 1/99 to 99/1 by mole, and has a number-average molecular weight of 1,000 to 1,000,000. The fluoropolymer base material contains a fluoropolymer having acid-reactive groups, such as the fluoropolymer described above, and is suitable for use in a photoresist.
(FR)
Nouveau fluoropolymère qui renferme des groupes réagissant aux acides et qui assure une transmission élevée du rayonnement d'énergie dans la région de l'ultraviolet extrême (157 nm) ; et matériau à base du fluoropolymère renfermant ledit fluoropolymère et pouvant peut être utilisé dans un photorésist. Ce fluoropolymère : comporte un segment représenté par la formule (M1) (M2) - (A) (dans laquelle M1 est un motif avec un groupe fonctionnel qui est éliminé ou décomposé par un acide ; M2 est un motif tiré d'un fluoroacrylate ; et A est un motif tiré d'un autre monomère copolymérisable). Il se compose de 1 à 99 % mol du motif (M1), de 1 à 99 % mol du motif (M2) et de 0 à 98 % mol du motif (A), à condition que le rapport (M1)/(M2) aille de 1/99 à 99/1 par mole, et a un poids moléculaire moyen en nombre compris entre 1 000 et 1 000 000. Le matériau de base du fluoropolymère comprend un fluoropolymère avec groupes acides, tel que le fluoropolymère susmentionné, et peut être utilisé comme photorésist.
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