H | ELECTRICITY |
01 | BASIC ELECTRIC ELEMENTS |
L | SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR |
21 | Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof |
02 | Manufacture or treatment of semiconductor devices or of parts thereof |
04 | the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer |
18 | the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials |
28 | Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268 |
28008 | Making conductor-insulator-semiconductor electrodes |
28017 | the insulator being formed after the semiconductor body, the semiconductor being silicon |
28026 | characterised by the conductor |
28035 | the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities |
28044 | the conductor comprising at least another non-silicon conductive layer |
28061 | the conductor comprising a metal or metallic silicode formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction |