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1. KR1020050096111 - GAS DISTRIBUTION PLATE ASSEMBLY FOR LARGE AREA PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Office République de Corée
Numéro de la demande 1020057012394
Date de la demande 30.06.2005
Numéro de publication 1020050096111
Date de publication 05.10.2005
Numéro de délivrance 1006960210000
Date de délivrance 16.03.2007
Type de publication B1
CIB
C23C 16/455
CCHIMIE; MÉTALLURGIE
23REVÊTEMENT DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT DE MATÉRIAUX AVEC DES MATÉRIAUX MÉTALLIQUES; TRAITEMENT CHIMIQUE DE SURFACE; TRAITEMENT DE DIFFUSION DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT PAR ÉVAPORATION SOUS VIDE, PAR PULVÉRISATION CATHODIQUE, PAR IMPLANTATION D'IONS OU PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR, EN GÉNÉRAL; MOYENS POUR EMPÊCHER LA CORROSION DES MATÉRIAUX MÉTALLIQUES, L'ENTARTRAGE OU LES INCRUSTATIONS, EN GÉNÉRAL
CREVÊTEMENT DE MATÉRIAUX MÉTALLIQUES; REVÊTEMENT DE MATÉRIAUX AVEC DES MATÉRIAUX MÉTALLIQUES; TRAITEMENT DE SURFACE DE MATÉRIAUX MÉTALLIQUES PAR DIFFUSION DANS LA SURFACE, PAR CONVERSION CHIMIQUE OU SUBSTITUTION; REVÊTEMENT PAR ÉVAPORATION SOUS VIDE, PAR PULVÉRISATION CATHODIQUE, PAR IMPLANTATION D'IONS OU PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR, EN GÉNÉRAL
16Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD)
44caractérisé par le procédé de revêtement
455caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
CPC
C23C 16/45565
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45563Gas nozzles
45565Shower nozzles
C23C 16/5096
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
505using radio frequency discharges
509using internal electrodes
5096Flat-bed apparatus
C23C 16/511
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
511using microwave discharges
Déposants APPLIED MATERIALS INC.
어플라이드 머티어리얼스, 인코포레이티드
Inventeurs CHOI SOO YOUNG
최, 수영
SHANG QUANYUAN
샹, 쿠안유안
GREENE ROBERT I.
그린, 로버트, 아이.
HOU LI
후, 리
Mandataires 남상선
Données relatives à la priorité 10417592 16.04.2003 US
Titre
(EN) GAS DISTRIBUTION PLATE ASSEMBLY FOR LARGE AREA PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
(KO) 대면적 플라즈마 강화 화학 기상 증착을 위한 가스 분산판어셈블리
Abrégé
(EN)

Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having a plurality of gas passages passing between an upstream side and a downstream side of the diffuser plate. At least one of the gas passages includes a first hole and a second hole coupled by an orifice hole. The first hole extends from the upstream side of the diffuser plate while the second hole extends from the downstream side. The orifice hole has a diameter less than the respective diameters of the first and second holes.

© KIPO & WIPO 2007

(KO)
처리 챔버에서 가스를 분산시키기 위한 가스 분산판의 실시예들이 제공된다. 일 실시예에서, 가스 분산판은 다수의 가스 경로들을 갖는 확산판을 포함하는데, 상기 가스 경로들은 상기 확산판의 업스트림측 및 다운스트림측 사이를 통과한다. 상기 가스 경로들 중 적어도 하나는 오리피스 구멍에 의하여 결합되는 제 1 구멍 및 제 2 구멍을 포함한다. 제 1 구멍은 확산판의 업스트림측으로부터 연장되는데 방하여 제 2 구멍은 다운스트림측으로부터 연장된다. 오리피스 구멍은 제 1 및 제 2 구멍들의 각각의 직경 보다 작은 직경을 갖는다.

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