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1. KR1020040033313 - EDGE TERMINATION IN A TRENCH-GATE MOSFET

Office
République de Corée
Numéro de la demande 1020047003750
Date de la demande 12.03.2004
Numéro de publication 1020040033313
Date de publication 21.04.2004
Type de publication A
CIB
H01L 21/336
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
02Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
04les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
18les dispositifs ayant des corps semi-conducteurs comprenant des éléments du groupe IV de la classification périodique, ou des composés AIIIBV, avec ou sans impuretés, p.ex. des matériaux de dopage
334Procédés comportant plusieurs étapes pour la fabrication de dispositifs du type unipolaire
335Transistors à effet de champ
336à grille isolée
CPC
H01L 29/7811
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
7811with an edge termination structure
H01L 29/404
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
402Field plates
404Multiple field plate structures
H01L 29/407
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
402Field plates
407Recessed field plates, e.g. trench field plates, buried field plates
H01L 29/42368
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42364characterised by the insulating layer, e.g. thickness or uniformity
42368the thickness being non-uniform
H01L 29/4238
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42372characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
4238characterised by the surface lay-out
H01L 29/7813
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
7813with trench gate electrode, e.g. UMOS transistors
Déposants KONINKLIJKE PHILIPS ELECTRONICS N.V.
코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Inventeurs IN'TZANDT MICHAEL A. A.
인찬트미카엘에이에이
HIJZEN ERWIN A.
히즈젠에르빈에이
HUETING RAYMOND J. E.
후에팅레이몬드제이이
Mandataires 김창세
김원준
Données relatives à la priorité 0122121.7 13.09.2001 GB
Titre
(EN) EDGE TERMINATION IN A TRENCH-GATE MOSFET
(KO) 셀 트렌치 게이트 전계 효과 트렌지스터 및 그 제조 방법
Abrégé
(EN)

To avoid premature breakdown at the edge of the active area of RESURF trench-gate MOS device, an edge field plate (24) can be placed with a connection to the gate and a second spaced field plate (24) in the same trench (12). The gate trench network (12) could be either formed by hexagon unit cells or by square unit cells. Since the RESURF condition requires a small cell pitch, self-aligned processing could be used.

© KIPO & WIPO 2007

(KO)
RESURF 트렌치 게이트 MOS 디바이스의 활성 영역의 에지에서의 조기 항복을 방지하기 위해서, 에지 전계 플레이트(24)는 동일한 트렌치 내의 게이트 및 이격된 제 2 전계 플레이트(24)에 접속되도록 위치될 수 있다. 게이트 트렌치 네트워크(12)는 6각 셀 또는 정사각형 셀로 형성될 수 있다. RESURF 상태가 작은 셀 피치를 필요로 하기 때문에, 자기 정렬된 공정이 사용될 수 있다.

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