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1. KR1020200092359 - 기판 처리 장치, 기판 처리 방법 및 기판 처리 방법을 실행시키는 프로그램이 기록된 기억 매체

Office
République de Corée
Numéro de la demande 1020207018418
Date de la demande 07.12.2018
Numéro de publication 1020200092359
Date de publication 03.08.2020
Type de publication A
CIB
H01L 21/67
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
67Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
B08B 3/02
BTECHNIQUES INDUSTRIELLES; TRANSPORTS
08NETTOYAGE
BNETTOYAGE EN GÉNÉRAL; PROTECTION CONTRE LA SALISSURE EN GÉNÉRAL
3Nettoyage par des procédés impliquant l'utilisation ou la présence d'un liquide ou de vapeur d'eau
02Nettoyage par la force de jets ou de pulvérisations
H01L 21/02
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
02Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/033
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
21Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
02Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
027Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe H01L21/18 ou H01L21/34187
033comportant des couches inorganiques
CPC
H01L 21/67051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
6704for wet cleaning or washing
67051using mainly spraying means, e.g. nozzles
B08B 3/02
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3Cleaning by methods involving the use or presence of liquid or steam
02Cleaning by the force of jets or sprays
H01L 21/02063
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02057Cleaning during device manufacture
0206during, before or after processing of insulating layers
02063the processing being the formation of vias or contact holes
H01L 21/02071
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02057Cleaning during device manufacture
02068during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
02071the processing being a delineation, e.g. RIE, of conductive layers
H01L 21/0337
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
033comprising inorganic layers
0334characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
0337characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
H01L 21/67115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67115mainly by radiation
Déposants 도쿄엘렉트론가부시키가이샤
Inventeurs 가가와, 고지
도시마, 다카유키
Mandataires 장수길
김성환
성재동
Données relatives à la priorité JP-P-2017-235212 07.12.2017 JP
Titre
(KO) 기판 처리 장치, 기판 처리 방법 및 기판 처리 방법을 실행시키는 프로그램이 기록된 기억 매체
Abrégé
(KO)
기판으로부터, 해당 기판 상의 부착물(예를 들어 하드마스크)을 효과적으로 제거한다. 기판 처리 방법은, (A) 기판에, 부착물의 제거제와, 제거제의 비점보다도 낮은 비점을 갖는 용매와, 증점제를 함유하는 제1 처리액을 공급하는 공정과, (B) 공정 (A) 후, 기판에, 가스 확산 방지막이 되는 유기 폴리머를 함유하는 제2 처리액을 공급하는 공정과, (C) 공정 (B) 후, 기판을, 용매의 비점 이상이면서 또한 제거제의 비점 미만의 소정 온도에서 가열하여, 용매의 증발 및 부착물과 제거제와의 반응을 촉진시키는 공정과, (D) 공정 (C) 후, 기판에 린스액을 공급하여, 기판으로부터 부착물을 제거하는 공정을 포함한다. 가스 확산 방지막이, 공정 (C)에서 부착물 및 제거제의 반응에 의해 생기는 가스상의 반응성 생성물이 당해 가스 확산 방지막을 통과해서 기판의 주위로 확산하는 것을 방지한다.

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