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1. KR1020150013421 - HIGH VOLTAGE OPERATION LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING SAME

Office
République de Corée
Numéro de la demande 1020140194958
Date de la demande 31.12.2014
Numéro de publication 1020150013421
Date de publication 05.02.2015
Numéro de délivrance 1016519230000
Date de délivrance 29.08.2016
Type de publication B1
CIB
H01L 33/06
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
33Dispositifs à semi-conducteurs ayant au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Détails
02caractérisés par les corps semi-conducteurs
04ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel
06au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
H01L 33/00
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
33Dispositifs à semi-conducteurs ayant au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Détails
CPC
H01L 33/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Y10S 977/95
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
977Nanotechnology
902Specified use of nanostructure
932for electronic or optoelectronic application
949Radiation emitter using nanostructure
95Electromagnetic energy
H01L 33/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
08with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Déposants 최운용
CHOI, WOON YONG
Inventeurs CHOI, WOON YONG
최운용
Mandataires CHOI, WOON YONG
Titre
(EN) HIGH VOLTAGE OPERATION LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING SAME
(KO) 고전압 구동 발광소자 및 그 제조 방법
Abrégé
(EN)
The present invention provides a high voltage operation light emitting diode and a method for manufacturing the same. The present invention relates to a semiconductor light emitting diode where a tunneling preventive layer between adjacent active areas gets narrow. The tunneling preventive layer is a semiconductor layer on which an electron or a positive hole does not move under an applied voltage enough to activate one among the entire active area, and separates individually adjacent two active areas in a quantum area. The semiconductor light emitting diode includes a plurality of individual active areas in a vertical direction within a single chip and operates at high voltages. COPYRIGHT KIPO 2015

(KO)
본 발명은 인접한 활성영역 사이에 터널링 방지층이 협지되는 반도체 발광소자에 관한 것으로, 상기 터널링 방지층은 전체 활성영역 중 어느 하나의 활성영역만을 활성화시키기에 충분한 인가전압 하에서는 전자 또는 정공이 이동할 수 없는 반도체층으로, 양자영역 범위에서 인접한 두 활성영역을 독립적으로 분리시켜, 반도체 발광소자는 단일 칩 내에서 수직방향으로 복수의 독립적인 활성영역을 포함하여, 고전압 구동이 가능한 것을 특징으로 한다.

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