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1. JP2014513433 - 共鳴及び拡散結合のために構成された表面擾乱をもつ光起電装置

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Office
Japon
Numéro de la demande 2014508426
Date de la demande 19.04.2012
Numéro de publication 2014513433
Date de publication 29.05.2014
Type de publication A5
CIB
H01L 31/04
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
31Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
04adaptés comme dispositifs de conversion photovoltaïque
CPC
H01L 31/022466
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022466made of transparent conductive layers, e.g. TCO, ITO layers
H01L 31/02363
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0236Special surface textures
02363of the semiconductor body itself, e.g. textured active layers
H01L 31/02366
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0236Special surface textures
02366of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
Y02E 10/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
Déposants コーニング　インコーポレイテッド
Inventeurs コッホ，カール　ダブリュー　サード
ノーラン，ダニエル　アロイシウス
Mandataires 柳田　征史
佐久間　剛
Données relatives à la priorité 61/480,808 29.04.2011 US
Titre
(JA) 共鳴及び拡散結合のために構成された表面擾乱をもつ光起電装置
Abrégé
(JA)

デバイスのＴＣＯ層に周期波長ΛＲの共鳴結合分布が設けられ、デバイスのガラス基板に周期波長ΛＤの拡散結合分布が設けられた、光起電装置が考えられる。これらの周期を定めるそれぞれの表面構造は光電変換層との界面において重畳され、合同して、デバイスの周波数依存パワースペクトル密度反転を定める。別の実施形態が開示され、考えられる。
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