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1. JP2005530337 - 多数のボディコンタクト領域を形成できる金属酸化膜半導体電界効果トランジスタデバイス

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Japon
Numéro de la demande 2004510005
Date de la demande 09.05.2003
Numéro de publication 2005530337
Date de publication 06.10.2005
Numéro de délivrance 5031985
Date de délivrance 06.07.2012
Type de publication B2
CIB
H01L 29/78
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
29Dispositifs à semi-conducteurs spécialement adaptés au redressement, à l'amplification, à la génération d'oscillations ou à la commutation et ayant au moins une barrière de potentiel ou une barrière de surface; Condensateurs ou résistances ayant au moins une barrière de potentiel ou une barrière de surface, p.ex. jonction PN, région d'appauvrissement, ou région de concentration de porteurs de charges; Détails des corps semi-conducteurs ou de leurs électrodes
66Types de dispositifs semi-conducteurs
68commandables par le seul courant électrique fourni ou par la seule tension appliquée, à une électrode qui ne transporte pas le courant à redresser, amplifier ou commuter
76Dispositifs unipolaires
772Transistors à effet de champ
78l'effet de champ étant produit par une porte isolée
CPC
H01L 21/823425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
823418with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
823425manufacturing common source or drain regions between a plurality of conductor-insulator-semiconductor structures
H01L 27/088
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
H01L 29/0692
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0684characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
0692Surface layout
H01L 29/1087
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
107Substrate region of field-effect devices
1075of field-effect transistors
1079with insulated gate
1087characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
Déposants ゼネラル　セミコンダクター，インク．
Inventeurs ブランチャード、リチャード、エー．
Mandataires 小池　晃
田村　榮一
伊賀　誠司
Données relatives à la priorité 10142674 10.05.2002 US
Titre
(JA) 多数のボディコンタクト領域を形成できる金属酸化膜半導体電界効果トランジスタデバイス
Abrégé
(JA)

【課題】
ＭＯＳＦＥＴに生来的に存在する寄生バイポーラトランジスタから生じる問題を効果的に解決する。
【解決手段】
ＭＯＳＦＥＴデバイスは、（ａ）ボディ領域と、（ｂ）複数のボディコンタクト領域と、（ｃ）複数のソース領域と、（ｄ）複数のドレイン領域と、（ｄ）ゲート領域とを備え、上面側から見ると、ソース領域及びドレイン領域は、直交する行と列に配列され、ボディコンタクト領域の少なくとも一部がソース領域及びドレイン領域のうちの４つの領域に隣接している。
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