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1. JP2002249397 - METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL

Office
Japon
Numéro de la demande 2001039556
Date de la demande 16.02.2001
Numéro de publication 2002249397
Date de publication 06.09.2002
Numéro de délivrance 4150167
Date de délivrance 04.07.2008
Type de publication B2
CIB
C30B 29/06
CCHIMIE; MÉTALLURGIE
30CROISSANCE DES CRISTAUX
BCROISSANCE DES MONOCRISTAUX; SOLIDIFICATION UNIDIRECTIONNELLE DES MATÉRIAUX EUTECTIQUES OU DÉMIXTION UNIDIRECTION- NELLE DES MATÉRIAUX EUTECTOÏDES; AFFINAGE DES MATÉRIAUX PAR FUSION DE ZONE; PRODUCTION DE MATÉRIAUX POLYCRISTALLINS HOMOGÈNES DE STRUCTURE DÉTERMINÉE; MONOCRISTAUX OU MATÉRIAUX POLYCRISTALLINS HOMOGÈNES DE STRUCTURE DÉTERMINÉE; POST-TRAITEMENT DE MONOCRISTAUX OU DE MATÉRIAUX POLYCRISTALLINS HOMOGÈNES DE STRUCTURE DÉTERMINÉE; APPAREILLAGES À CET EFFET
29Monocristaux ou matériaux polycristallins homogènes de structure déterminée caractérisés par leurs matériaux ou par leur forme
02Eléments
06Silicium
CPC
C30B 15/203
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
20Controlling or regulating
203the relationship of pull rate (v) to axial thermal gradient (G)
C30B 15/305
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
30Mechanisms for rotating or moving either the melt or the crystal
305Stirring of the melt
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C30B 15/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
Déposants SUMITOMO METAL IND LTD
株式会社SUMCO
NEC CORP
日本電気株式会社
Inventeurs KANDA TADASHI
神田 忠
KURAGAKI SHUNJI
倉垣 俊二
WATANABE MASATO
渡邉 匡人
EGUCHI MINORU
江口 実
Mandataires 森 道雄
Titre
(EN) METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL
(JA) シリコン単結晶の製造方法
Abrégé
(EN)

PROBLEM TO BE SOLVED: To manufacture at a high productivity a silicon single crystal, in which the external diameter of a latent area of oxidation induced stacking faults appearing in a crystal face is controlled to the range of 0-70% of its crystal diameter, and which is excellent in pressure resistant characteristics of oxide film, and especially to manufacture at a high productivity a single crystal consisting of a crystal area where crystal originated particles(COP) having the sizes of 0.1 m do not exist and neither does a dislocation cluster.

SOLUTION: A method for manufacturing a silicon single crystal with a Czochralski(CZ) method is employed. A pulling speed is so controlled that the external diameter of a latent area of oxidation induced stacking faults appearing in a crystal face is in the range of 0-70% of its crystal diameter. A magnetic field is applied to a silicon molten liquid through an upper coil 6a and a lower coil 6b. While an electric current including a component orthogonal to the magnetic field is applied to the silicon molten liquid through an electrode 12 and a pulling shaft 7, the single crystal is pulled.

COPYRIGHT: (C)2002,JPO


(JA)


(修正有)


【課題】 結晶面内に現れる酸化誘起積層欠陥の潜在領
域の外径が結晶直径の70%~0%の範囲に制御された
酸化膜耐圧特性に優れるシリコン単結晶を高生産で製造
する。
特に0.1μmサイズ以上のCOPが存在せず、
転位クラスタも含まない結晶領域から成るシリコン単結
晶を高生産で製造する。


【解決手段】 CZ法によるシリコン単結晶の製造方法
であって、結晶面内に現れる酸化誘起積層欠陥の潜在領
域の外径が結晶直径の70%~0%の範囲となるように
引き上げ速度を調整して、かつ上部コイル6aおよび下
部コイル6bによりシリコン溶融液に磁界を印加し、電
極13に引き上げ軸7を通じてこの磁界と直交する成分
を含む電流をシリコン溶融液に印加しながら単結晶を引
き上げる。


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