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PROBLEM TO BE SOLVED: To manufacture at a high productivity a silicon single crystal, in which the external diameter of a latent area of oxidation induced stacking faults appearing in a crystal face is controlled to the range of 0-70% of its crystal diameter, and which is excellent in pressure resistant characteristics of oxide film, and especially to manufacture at a high productivity a single crystal consisting of a crystal area where crystal originated particles(COP) having the sizes of 0.1 m do not exist and neither does a dislocation cluster.
SOLUTION: A method for manufacturing a silicon single crystal with a Czochralski(CZ) method is employed. A pulling speed is so controlled that the external diameter of a latent area of oxidation induced stacking faults appearing in a crystal face is in the range of 0-70% of its crystal diameter. A magnetic field is applied to a silicon molten liquid through an upper coil 6a and a lower coil 6b. While an electric current including a component orthogonal to the magnetic field is applied to the silicon molten liquid through an electrode 12 and a pulling shaft 7, the single crystal is pulled.
COPYRIGHT: (C)2002,JPO
（修正有）
【課題】 結晶面内に現れる酸化誘起積層欠陥の潜在領 域の外径が結晶直径の７０％～０％の範囲に制御された 酸化膜耐圧特性に優れるシリコン単結晶を高生産で製造 する。 特に０．１μｍサイズ以上のＣＯＰが存在せず、 転位クラスタも含まない結晶領域から成るシリコン単結 晶を高生産で製造する。
【解決手段】 ＣＺ法によるシリコン単結晶の製造方法 であって、結晶面内に現れる酸化誘起積層欠陥の潜在領 域の外径が結晶直径の７０％～０％の範囲となるように 引き上げ速度を調整して、かつ上部コイル６ａおよび下 部コイル６ｂによりシリコン溶融液に磁界を印加し、電 極１３に引き上げ軸７を通じてこの磁界と直交する成分 を含む電流をシリコン溶融液に印加しながら単結晶を引 き上げる。
