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1. IT201600092430 - Rivelatore di particelle in grado di separare segnali puntuali da segnali in ritardo.

Office
Italie
Numéro de la demande 201600092430
Date de la demande 14.09.2016
Numéro de publication 201600092430
Date de publication 14.03.2018
Type de publication A1
CIB
H01L 31/115
HÉLECTRICITÉ
01ÉLÉMENTS ÉLECTRIQUES FONDAMENTAUX
LDISPOSITIFS À SEMI-CONDUCTEURS; DISPOSITIFS ÉLECTRIQUES À L'ÉTAT SOLIDE NON PRÉVUS AILLEURS
31Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails
08dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances
10caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
115Dispositifs sensibles au rayonnement d'ondes très courtes, p.ex. rayons X, rayons gamma ou rayonnement corpusculaire
CPC
H01L 31/115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
H01L 31/022408
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
H01L 31/028
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
028including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/118
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
115Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
118of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
Déposants ISTITUTO NAZ FISICA NUCLEARE
Inventeurs CARTIGLIA NICOLÒ
DALLA BETTA GIAN FRANCO
PANCHERI LUCIO
BOSCARDIN MAURIZIO
PATERNOSTER GIOVANNI
Données relatives à la priorité 201600092430 14.09.2016 IT
Titre
(IT) Rivelatore di particelle in grado di separare segnali puntuali da segnali in ritardo.
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