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1. (EP0398998) MATERIAU CRISTALLIN POREUX SYNTHETIQUE, SA SYNTHESE ET SON UTILISATION.
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Claims

1. A synthetic porous crystalline material characterized by an x-ray diffraction pattern including values substantially as set forth in Table I below and having equilibrium adsorption capacities of greater than 10 wt.% for water vapor, greater than 4.5 wt.% for cyclohexane vapor, and greater than 10 wt.% for n-hexane vapor:
TABLE I
Interplanar d-Spacing (A) Relative Intensity, I/Iox100
30.0 ± 2.2 W-M
22.1 ± 1.3 W

  2. The synthetic porous crystalline material of claim 1 characterized by an x-ray diffraction pattern including values substantially as set forth in Table II below:
TABLE II
Interplanar d-Spacing (A) Relative Intensity, I/Iox100
30.0 ± 2.2 W-M
22.1 ± 1.3 W
3.91 ± 0.07 M-VS

  3. The synthetic porous crystalline material of claim 1 characterized by an x-ray diffraction pattern including values substantially as set forth in Table III below:
TABLE III
Interplanar d-Spacing (A) Relative Intensity, I/Iox100
30.0 ± 2.2 W-M
22.1 ± 1.3 W
6.00 ± 0.10 W-M
4.06 ± 0.07 W-S
3.91 ± 0.07 M-VS

  4. The synthetic porous crystalline material of claim 1 characterized by an x-ray diffraction pattern including values substantially as set forth in Table IV below:
TABLE IV
Interplanar d-Spacing (A) Relative Intensity, I/Iox100
30.0 ± 2.2 W-M
22.1 ± 1.3 W
12.36 ± 0.2 M-VS
11.03 ± 0.2 M-S
8.83 ± 0.14 M-VS
6.86 ± 0.14 W-M
6.18 ± 0.12 M-VS
6.00 ± 0.10 W-M
5.54 ± 0.10 W-M
4.92 ± 0.09 W
4.64 ± 0.08 W
4.41 ± 0.08 W-M
4.25 ± 0.08 W
4.10 ± 0.07 W-S
4.06 ± 0.07 W-S
3.91 ± 0.07 M-VS
3.75 ± 0.06 W-M
3.56 ± 0.06 W-M
3.42 ± 0.06 VS
3.30 ± 0.05 W-M
3.20 ± 0.05 W-M
3.14 ± 0.05 W-M
3.07 ± 0.05 W
2.99 ± 0.05 W
2.82 ± 0.05 W
2.78 ± 0.05 W
2.68 ± 0.05 W
2.59 ± 0.05 W

  5. The crystalline material of any preceding claim having a composition comprising the molar relationship



        X₂O₃:(n)YO₂,



wherein n is at least 10, X is a trivalent element and Y is a tetravalent element.
  6. The crystalline material of claim 5 wherein X comprises aluminum and Y comprises silicon.
  7. The crystalline material of claim 6 wherein n is from 20 to 40.
  8. A method for preparing the synthetic crystalline material of claim 5, said method comprising preparing a reaction mixture capable of forming said material upon crystallization, said reaction mixture containing sufficient amounts of alkali or alkaline earth metal cations, a source of tetravalent Y oxide containing at least 30 wt.% solid YO₂, a source of trivalent X oxide, water and hexamethyleneimine, and maintaining said reaction mixture under sufficient crystallization conditions until crystals of said material are formed.
  9. The method of claim 8 wherein said reaction mixture has a composition in terms of mole ratios within the following ranges:
YO₂/X₂O₃ = 10 to 80
H₂O/YO₂ = 5 to 100
OH⁻/YO₂ = 0.01 to 1.0
M/YO₂ = 0.01 to 2.0
R/YO₂ = 0.05 to 1.0
wherein R represents hexamethyleneimine and M represents alkali or alkaline earth metal.
  10. The method of claim 8 wherein said reaction mixture has a composition in terms of mole ratios within the following ranges:
YO₂/X₂O₃ = 10 to 60
H₂O/YO₂ = 10 to 50
OH⁻/YO₂ = 0.1 to 0.5
M/YO₂ = 0.1 to 1.0
R/YO₂ = 0.1 to 0.5.